Issued Patents 2020
Showing 25 most recent of 69 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10854753 | Uniform fin dimensions using fin cut hardmask | Kangguo Cheng | 2020-12-01 |
| 10840349 | Formation of air gap spacers for reducing parasitic capacitance | Kangguo Cheng, Choonghyun Lee, Heng Wu | 2020-11-17 |
| 10832955 | Methods and structures for forming uniform fins when using hardmask patterns | Kangguo Cheng, Yann Mignot, Choonghyun Lee | 2020-11-10 |
| 10832962 | Formation of an air gap spacer using sacrificial spacer layer | Kangguo Cheng, Choonghyun Lee | 2020-11-10 |
| 10832970 | Self-aligned silicide/germanide formation to reduce external resistance in a vertical field-effect transistor | Choonghyun Lee, Kangguo Cheng, Juntao Li | 2020-11-10 |
| 10803999 | Coated U3Si2 pellets with enhanced water and steam oxidation resistance | Edward J. Lahoda, Lu Cai | 2020-10-13 |
| 10784333 | Electronic devices having spiral conductive structures | Kangguo Cheng, Xuefeng Liu, Chi-Chun Liu, Yongan Xu | 2020-09-22 |
| 10784148 | Forming uniform fin height on oxide substrate | Kangguo Cheng | 2020-09-22 |
| 10784363 | Method and structure of forming finFET contact | Kangguo Cheng | 2020-09-22 |
| 10777658 | Method and structure of fabricating I-shaped silicon vertical field-effect transistors | Choonghyun Lee, Kangguo Cheng, Juntao Li | 2020-09-15 |
| 10777647 | Fin-type FET with low source or drain contact resistance | Kangguo Cheng, Juntao Li, Heng Wu | 2020-09-15 |
| 10770567 | Embedded endpoint Fin reveal | Kangguo Cheng | 2020-09-08 |
| 10770546 | High density nanotubes and nanotube devices | Choonghyun Lee, Kangguo Cheng, Juntao Li | 2020-09-08 |
| 10767070 | Process for preparing multi-color dispersions and multi-color dispersions made thereof | Dong Yun, Yujiang Wang, Jian Sun, Fei Guo | 2020-09-08 |
| 10756205 | Double gate two-dimensional material transistor | Chun Wing Yeung, Chen Zhang | 2020-08-25 |
| 10755976 | Field effect device with reduced capacitance and resistance in source/drain contacts at reduced gate pitch | Kangguo Cheng, Chi-Chun Liu | 2020-08-25 |
| 10741401 | Self-aligned semiconductor gate cut | Kangguo Cheng, Ruqiang Bao | 2020-08-11 |
| 10741677 | Stacked silicon nanotubes | Juntao Li, Kangguo Cheng, Choonghyun Lee | 2020-08-11 |
| 10734473 | On-chip MIM capacitor | Kangguo Cheng | 2020-08-04 |
| 10727352 | Long-channel fin field effect transistors | Zhenxing Bi, Kangguo Cheng, Juntao Li | 2020-07-28 |
| 10727315 | Nanosheet transistor | Kangguo Cheng, Juntao Li, Heng Wu | 2020-07-28 |
| 10727323 | Three-dimensional (3D) tunneling field-effect transistor (FET) | Juntao Li, Kangguo Cheng, Heng Wu | 2020-07-28 |
| 10720527 | Transistor having an oxide-isolated strained channel fin on a bulk substrate | Kangguo Cheng, Choonghyun Lee, Juntao Li | 2020-07-21 |
| 10707083 | High aspect ratio gates | Kangguo Cheng, Sivananda K. Kanakasabapathy | 2020-07-07 |
| 10707115 | Dry fin reveal without fin damage | Kangguo Cheng | 2020-07-07 |