Issued Patents 2020
Showing 26–50 of 75 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10734502 | Prevention of extension narrowing in nanosheet field effect transistors | Tenko Yamashita, Chun Wing Yeung | 2020-08-04 |
| 10734501 | Metal gate structure having gate metal layer with a top portion width smaller than a bottom portion width to reduce transistor gate resistance | Xin Miao, Kangguo Cheng, Wenyu Xu | 2020-08-04 |
| 10727139 | Three-dimensional monolithic vertical field effect transistor logic gates | Terry Hook, Ardasheir Rahman, Joshua M. Rubin | 2020-07-28 |
| 10700195 | Reduced resistance source and drain extensions in vertical field effect transistors | Peng Xu, Chun Wing Yeung | 2020-06-30 |
| 10692768 | Vertical transport field-effect transistor architecture | Joshua M. Rubin, Oleg Gluschenkov, Tenko Yamashita | 2020-06-23 |
| 10680082 | Vertical FET process with controlled gate length and self-aligned junctions | Tenko Yamashita | 2020-06-09 |
| 10672888 | Vertical transistors having improved gate length control | Kangguo Cheng, Xin Miao, Wenyu Xu | 2020-06-02 |
| 10665694 | Vertical transistors having improved gate length control | Kangguo Cheng, Xin Miao, Wenyu Xu | 2020-05-26 |
| 10665666 | Method of forming III-V on insulator structure on semiconductor substrate | Kangguo Cheng, Xin Miao, Wenyu Xu | 2020-05-26 |
| 10658246 | Self-aligned vertical fin field effect transistor with replacement gate structure | Tenko Yamashita, Kangguo Cheng, Xin Miao, Juntao Li | 2020-05-19 |
| 10658493 | Gate spacer and inner spacer formation for nanosheet transistors having relatively small space between gates | Zhenxing Bi, Kangguo Cheng, Nicolas Loubet, Xin Miao, Wenyu Xu | 2020-05-19 |
| 10658481 | Self-aligned gate cut in direct stacked vertical transport field effect transistor (VTFET) | Tenko Yamashita, Kangguo Cheng, Xin Miao | 2020-05-19 |
| 10645422 | Mode dependent intra smoothing filter table mapping methods for non-square prediction units | Guichun Li, Lingzhi Liu, Changcai Lai, Nam Ling, Jianhua Zheng | 2020-05-05 |
| 10644150 | Tunnel field-effect transistor with reduced subthreshold swing | Xin Miao, Kangguo Cheng, Wenyu Xu | 2020-05-05 |
| D882638 | Portable inflation pump | — | 2020-04-28 |
| 10636895 | Vertical transport field effect transistor on silicon with defined junctions | Kangguo Cheng, Xin Miao, Wenyu Xu | 2020-04-28 |
| 10622257 | VFET device design for top contact resistance measurement | Zuoguang Liu | 2020-04-14 |
| 10622454 | Formation of a semiconductor device with RIE-free spacers | Kangguo Cheng, Xin Miao, Wenyu Xu | 2020-04-14 |
| 10622354 | FinFETs with controllable and adjustable channel doping | Kangguo Cheng, Xin Miao, Wenyu Xu | 2020-04-14 |
| 10622264 | Nanosheet devices with different types of work function metals | Kangguo Cheng, Xin Miao, Wenyu Xu | 2020-04-14 |
| 10615258 | Nanosheet semiconductor structure with inner spacer formed by oxidation | Xin Miao, Kangguo Cheng, Wenyu Xu | 2020-04-07 |
| 10615267 | Semiconductor device strain relaxation buffer layer | Kangguo Cheng, Xin Miao, Wenyu Xu | 2020-04-07 |
| 10615256 | Nanosheet transistor gate structure having reduced parasitic capacitance | Kangguo Cheng, Xin Miao, Wenyu Xu | 2020-04-07 |
| 10607894 | Fabrication of a pair of vertical fin field effect transistors having a merged top source/drain | Kangguo Cheng, Xin Miao, Wenyu Xu | 2020-03-31 |
| 10608083 | Non-planar field effect transistor devices with low-resistance metallic gate structures | Kangguo Cheng, Wenyu Xu, Xin Miao | 2020-03-31 |