| 10804274 |
Co-integration of non-volatile memory on gate-all-around field effect transistor |
Zhenxing Bi, Zheng Xu, Kangguo Cheng |
2020-10-13 |
| 10784380 |
Gate-all-around transistor based non-volatile memory devices |
Zheng Xu, Zhenxing Bi, Qianwen Chen |
2020-09-22 |
| 10763118 |
Cyclic selective deposition for tight pitch patterning |
Kangguo Cheng, Zhenxing Bi, Juntao Li |
2020-09-01 |
| 10749040 |
Integration scheme for non-volatile memory on gate-all-around structure |
Zhenxing Bi, Zheng Xu, Kangguo Cheng |
2020-08-18 |
| 10714569 |
Producing strained nanosheet field effect transistors using a phase change material |
Kangguo Cheng, Juntao Li, Zhenxing Bi |
2020-07-14 |
| 10707127 |
Field effect transistor devices with self-aligned source/drain contacts and gate contacts positioned over active transistors |
Kangguo Cheng, Juntao Li, Zhenxing Bi |
2020-07-07 |
| 10692203 |
Measuring defectivity by equipping model-less scatterometry with cognitive machine learning |
Robin Hsin Kuo Chao, Huai Huang |
2020-06-23 |
| 10686014 |
Semiconductor memory device having a vertical active region |
Juntao Li, Kangguo Cheng, Takashi Ando |
2020-06-16 |
| 10679992 |
Integrated device with vertical field-effect transistors and hybrid channels |
Zhenxing Bi, Kangguo Cheng, Zheng Xu |
2020-06-09 |
| 10658590 |
Techniques for forming RRAM cells |
Kangguo Cheng, Juntao Li, Takashi Ando |
2020-05-19 |
| 10658583 |
Forming RRAM cell structure with filament confinement |
Juntao Li, Kangguo Cheng, Takashi Ando |
2020-05-19 |
| 10615288 |
Integration scheme for non-volatile memory on gate-all-around structure |
Zhenxing Bi, Zheng Xu, Kangguo Cheng |
2020-04-07 |
| 10586875 |
Gate-all-around transistor based non-volatile memory devices |
Zheng Xu, Zhenxing Bi, Qianwen Chen |
2020-03-10 |
| 10559625 |
RRAM cells in crossbar array architecture |
Takashi Ando, Kangguo Cheng, Juntao Li |
2020-02-11 |
