Issued Patents 2020
Showing 51–56 of 56 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10566246 | Shared contact trench comprising dual silicide layers and dual epitaxial layers for source/drain layers of NFET and PFET devices | Heng Wu, Kangguo Cheng, Zuoguang Liu | 2020-02-18 |
| 10559572 | Vertical transistor contact for a memory cell with increased density | Brent A. Anderson, Terence B. Hook | 2020-02-11 |
| 10553716 | Formation of a bottom source-drain for vertical field-effect transistors | Marc A. Bergendahl, Kangguo Cheng, Fee Li Lie, Shogo Mochizuki | 2020-02-04 |
| 10541312 | Air-gap top spacer and self-aligned metal gate for vertical fets | Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert | 2020-01-21 |
| 10541331 | Fabrication of a vertical fin field effect transistor with an asymmetric gate structure | Shogo Mochizuki | 2020-01-21 |
| 10529858 | FinFET with merge-free fins | Hong He, Chiahsun Tseng, Chun-Chen Yeh, Yunpeng Yin | 2020-01-07 |