Issued Patents 2020
Showing 26–50 of 56 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10692989 | Replacement metal gate structures | Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert | 2020-06-23 |
| 10692778 | Gate-all-around FETs having uniform threshold voltage | Ruqiang Bao, Dechao Guo, Heng Wu | 2020-06-23 |
| 10679993 | Vertical fin field effect transistor devices with a replacement metal gate | Ruqiang Bao, Michael P. Belyansky | 2020-06-09 |
| 10672705 | Method of forming a straight via profile with precise critical dimension control | Yongan Xu, Yann Mignot, Joe Lee | 2020-06-02 |
| 10672887 | Vertical FET with shaped spacer to reduce parasitic capacitance | Kangguo Cheng, Theodorus E. Standaert, Veeraraghavan S. Basker | 2020-06-02 |
| 10636738 | Contacts having a geometry to reduce resistance | Lawrence A. Clevenger, Baozhen Li, Kirk D. Peterson, Terry A. Spooner | 2020-04-28 |
| 10629443 | Bottom source/drain silicidation for vertical field-effect transistor (FET) | Brent A. Anderson, Huiming Bu, Terence B. Hook, Fee Li Lie | 2020-04-21 |
| 10628404 | Vertical transistor and method of forming the vertical transistor | Fee Li Lie, Shogo Mochizuki | 2020-04-21 |
| 10622301 | Method of forming a straight via profile with precise critical dimension control | Yongan Xu, Yann Mignot, Joe Lee | 2020-04-14 |
| 10622458 | Self-aligned contact for vertical field effect transistor | Brent A. Anderson, Steven R. Bentley, Su Chen Fan, Balasubramanian Pranatharthiharan, Ruilong Xie | 2020-04-14 |
| 10615082 | VFET metal gate patterning for vertical transport field effect transistor | Brent A. Anderson, Ruqiang Bao, Kangguo Cheng, Hemanth Jagannathan, Choonghyun Lee | 2020-04-07 |
| 10615276 | Integration of input/output device in vertical field-effect transistor technology | Xuefeng Liu, Brent A. Anderson, Terence B. Hook, Gauri Karve | 2020-04-07 |
| 10600694 | Gate metal patterning for tight pitch applications | Shogo Mochizuki, Alexander Reznicek, Joshua M. Rubin | 2020-03-24 |
| 10593779 | Replacement metal gate structures | Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert | 2020-03-17 |
| 10593803 | Self-aligned shallow trench isolation and doping for vertical fin transistors | Brent A. Anderson, Fee Li Lie | 2020-03-17 |
| 10593797 | Vertical transport field effect transistor structure with self-aligned top junction through early top source/drain epitaxy | Shogo Mochizuki, Brent A. Anderson, Hemanth Jagannathan | 2020-03-17 |
| 10593679 | Static random access memory (SRAM) density scaling by using middle of line (MOL) flow | Veeraraghavan S. Basker, Kangguo Cheng, Sivananda K. Kanakasabapathy, Theodorus E. Standaert | 2020-03-17 |
| 10586739 | Self-aligned punch through stopper liner for bulk FinFET | Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert | 2020-03-10 |
| 10586867 | Strained FinFET source drain isloation | Kangguo Cheng, Veeraraghavan S. Basker, Theodorus E. Standaert | 2020-03-10 |
| 10586857 | Replacement metal gate structures | Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert | 2020-03-10 |
| 10580880 | Replacement metal gate structures | Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert | 2020-03-03 |
| 10573726 | Replacement metal gate structures | Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert | 2020-02-25 |
| 10573727 | Vertical transistor device | Brent A. Anderson, Huiming Bu, Fee Li Lie, Shogo Mochizuki | 2020-02-25 |
| 10573521 | Gate metal patterning to avoid gate stack attack due to excessive wet etching | Alexander Reznicek, Shogo Mochizuki, Joshua M. Rubin | 2020-02-25 |
| 10566453 | Vertical transistor contact for cross-coupling in a memory cell | Brent A. Anderson, Terence B. Hook | 2020-02-18 |