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Ruqiang Bao, Hemanth Jagannathan |
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Highly selective dry etch process for vertical FET STI recess |
Zhenxing Bi, Muthumanickam Sankarapandian, Richard A. Conti |
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| 10679993 |
Vertical fin field effect transistor devices with a replacement metal gate |
Ruqiang Bao, Junli Wang |
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Threshold voltage adjustment from oxygen vacancy by scavenge metal filling at gate cut (CT) |
Huimei Zhou, Ruqiang Bao, Andrew M. Greene, Gen Tsutsui |
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Stress modulation of nFET and pFET fin structures |
Huimei Zhou, Kangguo Cheng, Oleg Gluschenkov, Richard A. Conti, James J. Kelly +1 more |
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| 10586700 |
Protection of low temperature isolation fill |
Richard A. Conti, Dechao Guo, Devendra K. Sadana, Jay William Strane |
2020-03-10 |
| 10535550 |
Protection of low temperature isolation fill |
Richard A. Conti, Dechao Guo, Devendra K. Sadana, Jay William Strane |
2020-01-14 |
