Issued Patents 2020
Showing 1–6 of 6 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10770361 | Controlling active fin height of FinFET device using etch protection layer to prevent recess of isolation layer during gate oxide removal | Yi Song, Veeraraghavan S. Baskar, Ekmini Anuja De Silva | 2020-09-08 |
| 10672668 | Dual width finned semiconductor structure | Yi Song, Eric R. Miller, Fee Li Lie, Richard A. Conti | 2020-06-02 |
| 10665514 | Controlling active fin height of FinFET device using etch protection layer to prevent recess of isolation layer during gate oxide removal | Yi Song, Veeraraghavan S. Baskar, Ekmini Anuja De Silva | 2020-05-26 |
| 10636709 | Semiconductor fins with dielectric isolation at fin bottom | Peng Xu, Kangguo Cheng | 2020-04-28 |
| 10586700 | Protection of low temperature isolation fill | Michael P. Belyansky, Richard A. Conti, Dechao Guo, Devendra K. Sadana | 2020-03-10 |
| 10535550 | Protection of low temperature isolation fill | Michael P. Belyansky, Richard A. Conti, Dechao Guo, Devendra K. Sadana | 2020-01-14 |