EM

Eric R. Miller

IBM: 9 patents #550 of 11,274Top 5%
TE Tessera: 1 patents #44 of 99Top 45%
RTX (Raytheon): 1 patents #789 of 1,952Top 45%
Overall (2020): #6,415 of 565,922Top 2%
12
Patents 2020

Issued Patents 2020

Patent #TitleCo-InventorsDate
10847569 Wafer level shim processing Jeffery H. Burkhart, Sean P. Kilcoyne 2020-11-24
10833190 Super long channel device within VFET architecture Marc A. Bergendahl, Kangguo Cheng, Gauri Karve, Fee Li Lie, John R. Sporre +1 more 2020-11-10
10818663 Fabrication of fin field effect transistors for complementary metal oxide semiconductor devices including separate n-type and p-type source/drains using a single spacer deposition Kangguo Cheng, Fee Li Lie, Sean Teehan 2020-10-27
10790393 Utilizing multilayer gate spacer to reduce erosion of semiconductor Fin during spacer patterning Andrew M. Greene, Hong He, Sivananda K. Kanakasabapathy, Gauri Karve, Pietro Montanini 2020-09-29
10741452 Controlling fin hardmask cut profile using a sacrificial epitaxial structure Stuart A. Sieg, Yann Mignot, Indira Seshadri, Christopher J. Waskiewicz 2020-08-11
10692776 Formation of VTFET fin and vertical fin profile Marc A. Bergendahl, Kangguo Cheng, Yann Mignot 2020-06-23
10672668 Dual width finned semiconductor structure Yi Song, Jay William Strane, Fee Li Lie, Richard A. Conti 2020-06-02
10615269 Nanosheet channel-to-source and drain isolation Marc A. Bergendahl, Kangguo Cheng, Fee Li Lie, John R. Sporre, Sean Teehan 2020-04-07
10607991 Air gap spacer for metal gates Marc A. Bergendahl, Kangguo Cheng, Fee Li Lie, John R. Sporre, Sean Teehan 2020-03-31
10573745 Super long channel device within VFET architecture Marc A. Bergendahl, Kangguo Cheng, Gauri Karve, Fee Li Lie, John R. Sporre +1 more 2020-02-25
10553581 Air gap spacer for metal gates Marc A. Bergendahl, Kangguo Cheng, Fee Li Lie, John R. Sporre, Sean Teehan 2020-02-04
10535529 Semiconductor fin length variability control Praveen Joseph, Ekmini Anuja De Silva, Stuart A. Sieg 2020-01-14