| 10833190 |
Super long channel device within VFET architecture |
Marc A. Bergendahl, Kangguo Cheng, Gauri Karve, Fee Li Lie, Eric R. Miller +1 more |
2020-11-10 |
| 10818663 |
Fabrication of fin field effect transistors for complementary metal oxide semiconductor devices including separate n-type and p-type source/drains using a single spacer deposition |
Kangguo Cheng, Fee Li Lie, Eric R. Miller |
2020-10-27 |
| 10629698 |
Method and structure for enabling high aspect ratio sacrificial gates |
Kangguo Cheng, Ryan O. Jung, Fee Li Lie, Jeffrey C. Shearer, John R. Sporre |
2020-04-21 |
| 10615269 |
Nanosheet channel-to-source and drain isolation |
Marc A. Bergendahl, Kangguo Cheng, Fee Li Lie, Eric R. Miller, John R. Sporre |
2020-04-07 |
| 10607991 |
Air gap spacer for metal gates |
Marc A. Bergendahl, Kangguo Cheng, Fee Li Lie, Eric R. Miller, John R. Sporre |
2020-03-31 |
| 10573745 |
Super long channel device within VFET architecture |
Marc A. Bergendahl, Kangguo Cheng, Gauri Karve, Fee Li Lie, Eric R. Miller +1 more |
2020-02-25 |
| 10553581 |
Air gap spacer for metal gates |
Marc A. Bergendahl, Kangguo Cheng, Fee Li Lie, Eric R. Miller, John R. Sporre |
2020-02-04 |
| 10541172 |
Semiconductor device with reduced contact resistance |
Kangguo Cheng, Alex Varghese |
2020-01-21 |
