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Measuring and modeling material planarization performance |
Romain Lallement |
2020-11-10 |
| 10811508 |
Vertical transistors having multiple gate thicknesses for optimizing performance and device density |
Brent A. Anderson, Fee Li Lie, Junli Wang |
2020-10-20 |
| 10811507 |
Vertical transistors having multiple gate thicknesses for optimizing performance and device density |
Brent A. Anderson, Fee Li Lie, Junli Wang |
2020-10-20 |
| 10741452 |
Controlling fin hardmask cut profile using a sacrificial epitaxial structure |
Eric R. Miller, Yann Mignot, Indira Seshadri, Christopher J. Waskiewicz |
2020-08-11 |
| 10734372 |
Vertical transport static random-access memory cells with transistors of active regions arranged in linear rows |
Brent A. Anderson, Junli Wang |
2020-08-04 |
| 10665715 |
Controlling gate length of vertical transistors |
Praveen Joseph, Indira Seshadri, Ekmini Anuja De Silva |
2020-05-26 |
| 10642950 |
Verifying planarization performance using electrical measures |
Romain Lallement |
2020-05-05 |
| 10629489 |
Approach to prevent collapse of high aspect ratio Fin structures for vertical transport Fin field effect transistor devices |
Indira Seshadri, Praveen Joseph, Ekmini Anuja De Silva |
2020-04-21 |
| 10622248 |
Tunable hardmask for overlayer metrology contrast |
Ekmini Anuja De Silva, Nelson Felix, Indira Seshadri |
2020-04-14 |
| 10580652 |
Alternating hardmasks for tight-pitch line formation |
John C. Arnold, Anuja E. DeSilva, Nelson Felix, Chi-Chun Liu, Yann Mignot |
2020-03-03 |
| 10535529 |
Semiconductor fin length variability control |
Praveen Joseph, Ekmini Anuja De Silva, Eric R. Miller |
2020-01-14 |
