Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Leakage control for gate-all-around field-effect transistor devices

Leakage control for gate-all-around field-effect transistor devices

US Patent 10797163 · Granted Oct 6, 2020

Estimated economic value: $5,751,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Non-overlapping gate conductors for GAA transistors2025
Stacked field effect transistor structure with independent gate control between 2025
Multi-VT solution for replacement metal gate bonded stacked FET2025
Multi-VT solution for replacement metal gate bonded stacked FET2025
Multi-VT solution for replacement metal gate bonded stacked FET2025
Multi-VT solution for replacement metal gate bonded stacked FET2025
Method and structure of forming independent contact for staggered CFET2025
Assigning control and variants to dynamically defined time periods in applicatio2025
Semiconductor device with power via2025
Stacked FETS including devices with thick gate oxide2025
Stacked FETS including devices with thick gate oxide2025
Stacked FETS including devices with thick gate oxide2025