Issued Patents All Time
Showing 25 most recent of 33 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8525234 | Formation of FinFET gate spacer | Catherine B. Labelle | 2013-09-03 |
| 8268727 | Methods for fabricating FinFET semiconductor devices using planarized spacers | Frank Scott Johnson | 2012-09-18 |
| 8174055 | Formation of FinFET gate spacer | Catherine B. Labelle | 2012-05-08 |
| 7985639 | Method for fabricating a semiconductor device having a semiconductive resistor structure | Frank Scott Johnson | 2011-07-26 |
| 7504326 | Use of scanning theme implanters and annealers for selective implantation and annealing | George Jonathan Kluth | 2009-03-17 |
| 7279386 | Method for forming a semiconductor arrangement with gate sidewall spacers of specific dimensions | Mark Kelling, Srikanteswara Dakshina-Murthy, Asuka Nomura | 2007-10-09 |
| 7268066 | Method for semiconductor gate line dimension reduction | Marina V. Plat, Chih-Yuh Yang, Scott A. Bell, Srikanteswara Dakshina-Murthy, Philip A. Fisher +1 more | 2007-09-11 |
| 7223698 | Method of forming a semiconductor arrangement with reduced field-to active step height | Srikanteswara Dakshina-Murthy, Mark Kelling, John G. Pellerin, Johannes Groschopf, Edward Asuka Nomura | 2007-05-29 |
| 7144785 | Method of forming isolation trench with spacer formation | Srikanteswara Dakshina-Murthy, Mark Kelling, Asuka Nomura | 2006-12-05 |
| 7105399 | Selective epitaxial growth for tunable channel thickness | Srikanteswara Dakshina-Murthy, Hans Van Meer, David E. Brown | 2006-09-12 |
| 7091106 | Method of reducing STI divot formation during semiconductor device fabrication | Johannes Groschopf, Srikanteswara Dakshina-Murthy, John G. Pellerin, Jon D. Cheek | 2006-08-15 |
| 6979651 | Method for forming alignment features and back-side contacts with fewer lithography and etch steps | Kay Hellig, Srikanteswara Dakshina-Murthy | 2005-12-27 |
| 6913958 | Method for patterning a feature using a trimmed hardmask | Marina V. Plat, Marilyn I. Wright, Chih-Yuh Yang | 2005-07-05 |
| 6900139 | Method for photoresist trim endpoint detection | Srikanteswara Dakshina-Murthy, Karen Turnquest | 2005-05-31 |
| 6893967 | L-shaped spacer incorporating or patterned using amorphous carbon or CVD organic materials | Marilyn I. Wright, Lu You, Kay Hellig | 2005-05-17 |
| 6881616 | System for forming a semiconductor device and method thereof including implanting through a L shaped spacer to form source and drain regions | Kay Hellig, Wen-Jie Qi | 2005-04-19 |
| 6849530 | Method for semiconductor gate line dimension reduction | Marina V. Plat, Chih-Yuh Yang, Scott A. Bell, Srikanteswara Dakshina-Murthy, Philip A. Fisher +1 more | 2005-02-01 |
| 6812077 | Method for patterning narrow gate lines | Darin A. Chan, Mark S. Chang | 2004-11-02 |
| 6797552 | Method for defect reduction and enhanced control over critical dimensions and profiles in semiconductor devices | Mark S. Chang, Marina V. Plat, Chih-Yuh Yang, Scott A. Bell, Srikanteswara Dakshina-Murthy | 2004-09-28 |
| 6773998 | Modified film stack and patterning strategy for stress compensation and prevention of pattern distortion in amorphous carbon gate patterning | Philip A. Fisher, Marina V. Plat, Chih-Yuh Yang, Christopher F. Lyons, Scott A. Bell +2 more | 2004-08-10 |
| 6764947 | Method for reducing gate line deformation and reducing gate line widths in semiconductor devices | Darin A. Chan, Marina V. Plat, Marilyn I. Wright, Chih-Yuh Yang, Lu You +2 more | 2004-07-20 |
| 6764949 | Method for reducing pattern deformation and photoresist poisoning in semiconductor device fabrication | Marina V. Plat, Chih-Yuh Yang, Scott A. Bell, Darin A. Chan, Philip A. Fisher +6 more | 2004-07-20 |
| 6750127 | Method for fabricating a semiconductor device using amorphous carbon having improved etch resistance | Mark S. Chang, Darin A. Chan, Chih-Yuh Yang, Lu You, Scott A. Bell +1 more | 2004-06-15 |
| 6734088 | Control of two-step gate etch process | Matthew A. Purdy, Scott Bushman, James H. Hussey, Jr. | 2004-05-11 |
| 6673635 | Method for alignment mark formation for a shallow trench isolation process | Kay Hellig, Srikanteswara Dakshina-Murthy | 2004-01-06 |