KC

Kangguo Cheng

IBM: 2575 patents #1 of 70,183Top 1%
Globalfoundries: 269 patents #3 of 4,424Top 1%
TE Tessera: 34 patents #14 of 271Top 6%
SS Stmicroelectronics Sa: 19 patents #57 of 1,676Top 4%
AS Adeia Semiconductor Solutions: 13 patents #1 of 57Top 2%
ET Elpis Technologies: 12 patents #1 of 121Top 1%
CEA: 6 patents #716 of 7,956Top 9%
GU Globalfoundries U.S.: 5 patents #206 of 665Top 35%
Samsung: 5 patents #22,466 of 75,807Top 30%
RE Renesas Electronics: 4 patents #1,016 of 4,529Top 25%
IB International Business: 1 patents #4 of 119Top 4%
📍 Schenectady, NY: #1 of 1,353 inventorsTop 1%
🗺 New York: #1 of 115,490 inventorsTop 1%
Overall (All Time): #5 of 4,157,543Top 1%
2819
Patents All Time

Issued Patents All Time

Showing 176–200 of 2,819 patents

Patent #TitleCo-InventorsDate
11621348 Vertical transistor devices with composite high-K and low-K spacers with a controlled top junction Chen Zhang, Xin Miao, Wenyu Xu 2023-04-04
11615992 Substrate isolated VTFET devices Eric R. Miller, Marc A. Bergendahl, John R. Sporre, Gauri Karve, Fee Li Lie 2023-03-28
11615988 FinFET devices Veeraraghavan S. Basker, Theodorus E. Standaert, Junli Wang 2023-03-28
11605672 Steep-switch field effect transistor with integrated bi-stable resistive system Julien Frougier, Nicolas Loubet, Ruilong Xie, Daniel Chanemougame, Ali Razavieh 2023-03-14
11605409 MTJ-based analog memory device Dimitri Houssameddine, Julien Frougier, Ruilong Xie 2023-03-14
11594676 Resistive random-access memory Choonghyun Lee, Juntao Li, Peng Xu 2023-02-28
11588104 Resistive memory with vertical transport transistor Carl Radens, Ruilong Xie, Juntao Li 2023-02-21
11587978 Phase change memory with improved recovery from element segregation 2023-02-21
11581190 Method of fabricating semiconductor fins by differentially oxidizing mandrel sidewalls 2023-02-14
11575042 Tunnel field-effect transistor with reduced subthreshold swing Xin Miao, Chen Zhang, Wenyu Xu 2023-02-07
11574844 Fabrication of a vertical fin field effect transistor with reduced dimensional variations 2023-02-07
11574811 Tight pitch patterning 2023-02-07
11569366 Fully depleted SOI transistor with a buried ferroelectric layer in back-gate Shawn P. Fetterolf, Terence B. Hook 2023-01-31
11569361 Nanosheet transistors with wrap around contact Julien Frougier, Ruilong Xie, Chanro Park 2023-01-31
11569229 Stacked vertical transport field effect transistors with anchors Chen Zhang, Tenko Yamashita, Wenyu Xu, Fee Li Lie 2023-01-31
11557589 Air gap spacer for metal gates Marc A. Bergendahl, Fee Li Lie, Eric R. Miller, John R. Sporre, Sean Teehan 2023-01-17
11545624 Phase change memory cell resistive liner Zuoguang Liu, Juntao Li, Ruilong Xie 2023-01-03
11538520 Negative-capacitance ferroelectric transistor assisted resistive memory programming 2022-12-27
11538720 Stacked transistors with different channel widths Lawrence A. Clevenger, Balasubramanian Pranatharthiharan, John H. Zhang 2022-12-27
11538939 Controlled bottom junctions Brent A. Anderson, Ruilong Xie, Juntao Li 2022-12-27
11527446 Transistor having strain-inducing anchors and a strain-enhancing suspended channel Juntao Li, Julien Frougier, Ruilong Xie 2022-12-13
11527535 Variable sheet forkFET device Julien Frougier, Ruilong Xie, Chanro Park 2022-12-13
11515401 Vertical fin field effect transistor with a reduced gate-to-bottom source/drain parasitic capacitance Chen Zhang, Xin Miao, Wenyu Xu 2022-11-29
11515430 Tilted nanowire transistor Pouya Hashemi, Alexander Reznicek, Karthik Balakrishnan 2022-11-29
11502202 Transistors with uniform source/drain epitaxy Ruilong Xie, Chun-Chen Yeh, Tenko Yamashita 2022-11-15