KC

Kangguo Cheng

IBM: 2575 patents #1 of 70,183Top 1%
Globalfoundries: 269 patents #3 of 4,424Top 1%
TE Tessera: 34 patents #14 of 271Top 6%
SS Stmicroelectronics Sa: 19 patents #57 of 1,676Top 4%
AS Adeia Semiconductor Solutions: 13 patents #1 of 57Top 2%
ET Elpis Technologies: 12 patents #1 of 121Top 1%
CEA: 6 patents #716 of 7,956Top 9%
GU Globalfoundries U.S.: 5 patents #206 of 665Top 35%
Samsung: 5 patents #22,466 of 75,807Top 30%
RE Renesas Electronics: 4 patents #1,016 of 4,529Top 25%
IB International Business: 1 patents #4 of 119Top 4%
📍 Schenectady, NY: #1 of 1,353 inventorsTop 1%
🗺 New York: #1 of 115,490 inventorsTop 1%
Overall (All Time): #5 of 4,157,543Top 1%
2819
Patents All Time

Issued Patents All Time

Showing 126–150 of 2,819 patents

Patent #TitleCo-InventorsDate
11812675 Filament confinement in resistive random access memory Juntao Li, Dexin Kong, Zheng Xu 2023-11-07
11805704 Via interconnects for a magnetoresistive random-access memory device Julien Frougier, Dimitri Houssameddine, Ruilong Xie 2023-10-31
11798852 Hybrid-channel nano-sheet FETs Zhenxing Bi, Peng Xu, Wenyu Xu 2023-10-24
11798851 Work function metal patterning for nanosheet CFETs Ruilong Xie, Chen Zhang, Juntao Li 2023-10-24
11791342 Varactor integrated with complementary metal-oxide semiconductor devices Julien Frougier, Ruilong Xie, Juntao Li 2023-10-17
11791396 Field effect transistor with multiple gate dielectrics and dual work-functions with precisely controlled gate lengths Ruilong Xie, Julien Frougier, Chanro Park 2023-10-17
11791199 Nanosheet IC device with single diffusion break Ruilong Xie, Juntao Li, Carl Radens 2023-10-17
11779918 3D nanochannel interleaved devices Lawrence A. Clevenger, Donald F. Canaperi, Shawn P. Fetterolf 2023-10-10
11784095 Fabrication of a vertical fin field effect transistor with reduced dimensional variations 2023-10-10
11784125 Wrap around cross-couple contact structure with enhanced gate contact size Ruilong Xie, Chanro Park, Julien Frougier 2023-10-10
11777275 Augmented semiconductor lasers with spontaneous emissions blockage Julien Frougier, Ruilong Xie, Chanro Park 2023-10-03
11776956 III-V fins by aspect ratio trapping and self-aligned etch to remove rough epitaxy surface Jeehwan Kim 2023-10-03
11764259 Vertical field-effect transistor with dielectric fin extension Chen Zhang, Tenko Yamashita, Xin Miao, Wenyu Xu 2023-09-19
11764265 Nanosheet transistor with inner spacers Ruilong Xie, Julien Frougier, Juntao Li 2023-09-19
11756957 Reducing gate resistance in stacked vertical transport field effect transistors Heng Wu, Chen Zhang, Tenko Yamashita, Joshua M. Rubin 2023-09-12
11742836 Random number generator using cross-coupled ring oscillators Carl Radens 2023-08-29
11738995 Manipulation of a molecule using dipole moments Lawrence A. Clevenger, Shawn P. Fetterolf, Donald F. Canaperi 2023-08-29
11735658 Tunnel field-effect transistor with reduced subthreshold swing Xin Miao, Chen Zhang, Wenyu Xu 2023-08-22
11735590 Fin stack including tensile-strained and compressively strained fin portions Julien Frougier, Ruilong Xie, Chanro Park 2023-08-22
11728433 Vertical transistor with self-aligned gate Juntao Li, Ruilong Xie, Chanro Park 2023-08-15
11728428 Dielectric isolated fin with improved fin profile Bruce B. Doris, Darsen D. Lu, Ali Khakifirooz, Kern Rim 2023-08-15
11728340 Single diffusion break isolation for gate-all-around field-effect transistor devices Wenyu Xu, Xin Miao, Chen Zhang 2023-08-15
11710699 Complementary FET (CFET) buried sidewall contact with spacer foot Ruilong Xie, Jingyun Zhang, Reinaldo Vega 2023-07-25
11705517 Nanosheet transistors with strained channel regions Xin Miao, Wenyu Xu, Chen Zhang 2023-07-18
11705504 Stacked nanosheet transistor with defect free channel Lan Yu, Heng Wu, Chen Zhang 2023-07-18