Issued Patents All Time
Showing 51–75 of 93 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9805935 | Bottom source/drain silicidation for vertical field-effect transistor (FET) | Brent A. Anderson, Terence B. Hook, Fee Li Lie, Junli Wang | 2017-10-31 |
| 9773893 | Forming a sacrificial liner for dual channel devices | Kangguo Cheng, Dechao Guo, Sivananda K. Kanakasabapathy, Peng Xu | 2017-09-26 |
| 9721848 | Cutting fins and gates in CMOS devices | Kangguo Cheng, Andrew M. Greene, Dechao Guo, Sivananda K. Kanakasabapathy, Gauri Karve +6 more | 2017-08-01 |
| 9721834 | HDP fill with reduced void formation and spacer damage | Andrew M. Greene, Balasubramanian Pranatharthiharan, Ruilong Xie | 2017-08-01 |
| 9704848 | Electrostatic discharge devices and methods of manufacture | Junjun Li, Theodorus E. Standaert, Tenko Yamashita | 2017-07-11 |
| 9698061 | Polysilicon resistor formation in silicon-on-insulator replacement metal gate finFET processes | Veeraraghavan S. Basker, Tenko Yamashita | 2017-07-04 |
| 9595599 | Dielectric isolated SiGe fin on bulk substrate | Shogo Mochizuki, Tenko Yamashita | 2017-03-14 |
| 9589851 | Dipole-based contact structure to reduce metal-semiconductor contact resistance in MOSFETs | Hui-feng Li, Vijay Narayanan, Hiroaki Niimi, Tenko Yamashita | 2017-03-07 |
| 9583563 | Conformal doping for punch through stopper in fin field effect transistor devices | Sivananda K. Kanakasabapathy, Fee Li Lie, Tenko Yamashita | 2017-02-28 |
| 9570574 | Recessed metal liner contact with copper fill | Praneet Adusumilli, Veeraraghavan S. Basker, Zuoguang Liu | 2017-02-14 |
| 9558995 | HDP fill with reduced void formation and spacer damage | Andrew M. Greene, Balasubramanian Pranatharthiharan, Ruilong Xie | 2017-01-31 |
| 9548379 | Asymmetric multi-gate FinFET | Veeraraghavan S. Basker, Andres Bryant, Sivananda K. Kanakasabapathy, Tenko Yamashita | 2017-01-17 |
| 9543435 | Asymmetric multi-gate finFET | Veeraraghavan S. Basker, Andres Bryant, Sivananda K. Kanakasabapathy, Tenko Yamashita | 2017-01-10 |
| 9514998 | Polysilicon resistor formation in silicon-on-insulator replacement metal gate finFET processes | Veeraraghavan S. Basker, Tenko Yamashita | 2016-12-06 |
| 9502313 | Polysilicon resistor formation in silicon-on-insulator replacement metal gate finFET processes | Veeraraghavan S. Basker, Tenko Yamashita | 2016-11-22 |
| 9496225 | Recessed metal liner contact with copper fill | Praneet Adusumilli, Veeraraghavan S. Basker, Zuoguang Liu | 2016-11-15 |
| 9425184 | Electrostatic discharge devices and methods of manufacture | Junjun Li, Theodorus E. Standaert, Tenko Yamashita | 2016-08-23 |
| 9281303 | Electrostatic discharge devices and methods of manufacture | Junjun Li, Theodorus E. Standaert, Tenko Yamashita | 2016-03-08 |
| 9082788 | Method of making a semiconductor device including an all around gate | Nicolas Loubet, Prasanna Khare | 2015-07-14 |
| 9064885 | Electrostatic discharge resistant diodes | Robert J. Gauthier, Jr., Terence B. Hook, Effendi Leobandung, Tenko Yamashita | 2015-06-23 |
| 9054124 | Electrostatic discharge resistant diodes | Robert J. Gauthier, Jr., Terence B. Hook, Effendi Leobandung, Tenko Yamashita | 2015-06-09 |
| 8933515 | Device structure, layout and fabrication method for uniaxially strained transistors | Stephen W. Bedell, Kangguo Cheng, Bruce B. Doris, Johnathan E. Faltermeier, Ali Khakifirooz +2 more | 2015-01-13 |
| 8753964 | FinFET structure having fully silicided fin | Andres Bryant, Dechao Guo, Wilfried E. Haensch, Chun-Chen Yeh | 2014-06-17 |
| 8723262 | SOI FinFET with recessed merged fins and liner for enhanced stress coupling | Veeraraghavan S. Basker, Effendi Leobandung, Theodorus E. Standaert, Tenko Yamashita, Chun-Chen Yeh | 2014-05-13 |
| 8680651 | Nanopillar decoupling capacitor | Satya N. Chakravarti, Dechao Guo, Keith Kwong Hon Wong | 2014-03-25 |