Issued Patents All Time
Showing 26–50 of 168 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12002805 | Local vertical interconnects for monolithic stack transistors | Ruilong Xie, Chen Zhang, Eric R. Miller | 2024-06-04 |
| 11990530 | Replacement-channel fabrication of III-V nanosheet devices | Jingyun Zhang, Choonghyun Lee, Chun Wing Yeung, Robin Hsin Kuo Chao | 2024-05-21 |
| 11948944 | Optimized contact resistance for stacked FET devices | Ruilong Xie, Jingyun Zhang, Julien Frougier | 2024-04-02 |
| 11944013 | Magnetic tunnel junction device with minimum stray field | Dimitri Houssameddine, Huai Huang, Tianji Zhou | 2024-03-26 |
| 11942557 | Nanosheet transistor with enhanced bottom isolation | Lan Yu, Andrew M. Greene, Wenyu Xu | 2024-03-26 |
| 11923434 | Self-aligned bottom spacer epi last flow for VTFET | Tao Li, Ruilong Xie, Sung-Dae Suk | 2024-03-05 |
| 11908944 | Contact formation for vertical field effect transistors | Lan Yu, Samuel S. Choi, Ruilong Xie | 2024-02-20 |
| 11908907 | VFET contact formation | Ruilong Xie, Tian Shen, Kai Zhao | 2024-02-20 |
| 11901438 | Nanosheet transistor | Kangguo Cheng, Juntao Li, Peng Xu | 2024-02-13 |
| 11894423 | Contact resistance reduction in nanosheet device structure | Dechao Guo, Ruqiang Bao, Junli Wang, Lan Yu, Reinaldo Vega +1 more | 2024-02-06 |
| 11830946 | Bottom source/drain for fin field effect transistors | Shogo Mochizuki, Gen Tsutsui, Kangguo Cheng | 2023-11-28 |
| 11823724 | Magneto-electric low power analogue magnetic tunnel junction memory | Saba Zare, Dimitri Houssameddine, Karthik Yogendra | 2023-11-21 |
| 11818971 | PCM cell with resistance drift correction | Ruilong Xie, Nanbo Gong, Cheng-Wei Cheng | 2023-11-14 |
| 11764298 | VTFET with buried power rails | Chen Zhang, Ruilong Xie, Junli Wang, Brent A. Anderson | 2023-09-19 |
| 11756957 | Reducing gate resistance in stacked vertical transport field effect transistors | Chen Zhang, Kangguo Cheng, Tenko Yamashita, Joshua M. Rubin | 2023-09-12 |
| 11749744 | Fin structure for vertical transport field effect transistor | Lan Yu, Dechao Guo, Junli Wang, Ruqiang Bao, Ruilong Xie | 2023-09-05 |
| 11742409 | Replacement-channel fabrication of III-V nanosheet devices | Jingyun Zhang, Choonghyun Lee, Chun Wing Yeung, Robin Hsin Kuo Chao | 2023-08-29 |
| 11742354 | Top epitaxial layer and contact for VTFET | Ruilong Xie, Christopher J. Waskiewicz, Alexander Reznicek, Su Chen Fan | 2023-08-29 |
| 11729996 | High retention eMRAM using VCMA-assisted writing | Ruilong Xie, Julien Frougier, Bruce B. Doris | 2023-08-15 |
| 11715794 | VTFET with cell height constraints | Ruilong Xie, Lan Yu, Alexander Reznicek, Junli Wang | 2023-08-01 |
| 11710521 | Static random-access memory cell design | Lan Yu, Junli Wang, Ruqiang Bao, Dechao Guo | 2023-07-25 |
| 11705504 | Stacked nanosheet transistor with defect free channel | Lan Yu, Kangguo Cheng, Chen Zhang | 2023-07-18 |
| 11688635 | Oxygen-free replacement liner for improved transistor performance | Dechao Guo, Junli Wang, Ruqiang Bao | 2023-06-27 |
| 11664059 | Low power MTJ-based analog memory device | Dimitri Houssameddine, Saba Zare, Karthik Yogendra | 2023-05-30 |
| 11621199 | Silicide formation for source/drain contact in a vertical transport field-effect transistor | Su Chen Fan, Ruilong Xie, Huai Huang | 2023-04-04 |