Issued Patents All Time
Showing 51–75 of 168 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11616140 | Vertical transport field effect transistor with bottom source/drain | Gen Tsutsui, Lan Yu, Ruilong Xie | 2023-03-28 |
| 11615990 | CMOS top source/drain region doping and epitaxial growth for a vertical field effect transistor | Ruilong Xie, Su Chen Fan, Jay William Strane, Hemanth Jagannathan | 2023-03-28 |
| 11605717 | Wrapped-around contact for vertical field effect transistor top source-drain | Ruilong Xie, Eric R. Miller, Jeffrey C. Shearer, Su Chen Fan | 2023-03-14 |
| 11563173 | PCM cell with resistance drift correction | Ruilong Xie, Nanbo Gong, Cheng-Wei Cheng | 2023-01-24 |
| 11557651 | Nanosheet transistors with inner airgaps | Ruilong Xie, Alexander Reznicek, Lan Yu | 2023-01-17 |
| 11489009 | Integrating embedded memory on CMOS logic using thin film transistors | Julien Frougier, Bruce B. Doris, Chen Zhang, Ruilong Xie | 2022-11-01 |
| 11476163 | Confined gate recessing for vertical transport field effect transistors | Ruilong Xie, Chanro Park, Sung-Dae Suk | 2022-10-18 |
| 11456219 | Gate-all-around FETs having uniform threshold voltage | Ruqiang Bao, Dechao Guo, Junli Wang | 2022-09-27 |
| 11444238 | Scalable heat sink and magnetic shielding for high density MRAM arrays | Julien Frougier, Ruilong Xie, Chen Zhang, Bruce B. Doris | 2022-09-13 |
| 11437489 | Techniques for forming replacement metal gate for VFET | Ruilong Xie, Chanro Park, Kangguo Cheng | 2022-09-06 |
| 11411048 | Magnetoresistive random-access memory device structure | Alexander Reznicek, Ruilong Xie, Julien Frougier, Chen Zhang, Bruce B. Doris | 2022-08-09 |
| 11411049 | Symmetric read operation resistive random-access memory cell with bipolar junction selector | Alexander Reznicek, Bahman Hekmatshoartabari, Ruilong Xie | 2022-08-09 |
| 11380843 | Phase change memory using multiple stacks of PCM materials | Tian Shen, Kevin W. Brew, Jingyun Zhang | 2022-07-05 |
| 11362193 | Inverse T-shaped contact structures having air gap spacers | Kangguo Cheng, Choonghyun Lee, Juntao Li, Peng Xu | 2022-06-14 |
| 11342230 | Homogeneous densification of fill layers for controlled reveal of vertical fins | Kangguo Cheng, Choonghyun Lee, Juntao Li, Peng Xu | 2022-05-24 |
| 11316105 | Phase change material switch and method of fabricating same | Tian Shen, Ruilong Xie, Kevin W. Brew, Jingyun Zhang | 2022-04-26 |
| 11289573 | Contact resistance reduction in nanosheet device structure | Dechao Guo, Ruqiang Bao, Junli Wang, Lan Yu, Reinaldo Vega +1 more | 2022-03-29 |
| 11282838 | Stacked gate structures | Chen Zhang, Dechao Guo, Junli Wang, Ruilong Xie, Kangguo Cheng +5 more | 2022-03-22 |
| 11276781 | Bottom source/drain for fin field effect transistors | Shogo Mochizuki, Gen Tsutsui, Kangguo Cheng | 2022-03-15 |
| 11251362 | Stacked spin-orbit-torque magnetoresistive random-access memory | Julien Frougier, Ruilong Xie, Chen Zhang | 2022-02-15 |
| 11251280 | Strained nanowire transistor with embedded epi | Chen Zhang, Kangguo Cheng, Xin Miao, Lan Yu | 2022-02-15 |
| 11239119 | Replacement bottom spacer for vertical transport field effect transistors | Ruilong Xie, Jay William Strane, Hemanth Jagannathan, Lan Yu, Tao Li | 2022-02-01 |
| 11227801 | Formation of contacts for semiconductor devices | Ruilong Xie, Su Chen Fan, Julien Frougier | 2022-01-18 |
| 11189713 | Nanosheet transistor having wrap-around bottom isolation | Ruilong Xie, Lan Yu, Kangguo Cheng | 2021-11-30 |
| 11189725 | VTFET with cell height constraints | Ruilong Xie, Lan Yu, Alexander Reznicek, Junli Wang | 2021-11-30 |