Issued Patents All Time
Showing 101–125 of 168 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10985273 | Vertical field-effect transistor including a fin having sidewalls with a tapered bottom profile | Chun Wing Yeung, Choonghyun Lee, Jingyun Zhang, Robin Hsin Kuo Chao | 2021-04-20 |
| 10985064 | Buried power and ground in stacked vertical transport field effect transistors | Chen Zhang, Kangguo Cheng, Tenko Yamashita | 2021-04-20 |
| 10971399 | Oxygen-free replacement liner for improved transistor performance | Dechao Guo, Junli Wang, Ruqiang Bao | 2021-04-06 |
| 10957778 | Formation of air gap spacers for reducing parasitic capacitance | Kangguo Cheng, Peng Xu, Choonghyun Lee | 2021-03-23 |
| 10950492 | Fabrication of vertical transport fin field effect transistors with a self-aligned separator and an isolation region with an air gap | Kangguo Cheng, Zuoguang Liu, Sebastian Naczas, Peng Xu | 2021-03-16 |
| 10943989 | Gate to source/drain leakage reduction in nanosheet transistors via inner spacer optimization | Ruqiang Bao, Junli Wang, Lan Yu, Dechao Guo | 2021-03-09 |
| 10937866 | Method and structure for forming silicon germanium FinFET | Peng Xu, Kangguo Cheng, Juntao Li | 2021-03-02 |
| 10930563 | Formation of stacked nanosheet semiconductor devices | Kangguo Cheng, Juntao Li, Peng Xu | 2021-02-23 |
| 10916657 | Tensile strain in NFET channel | Peng Xu, Kangguo Cheng, Juntao Li | 2021-02-09 |
| 10910470 | Nanosheet transistors with inner airgaps | Ruilong Xie, Alexander Reznicek, Lan Yu | 2021-02-02 |
| 10840349 | Formation of air gap spacers for reducing parasitic capacitance | Kangguo Cheng, Peng Xu, Choonghyun Lee | 2020-11-17 |
| 10833081 | Forming isolated contacts in a stacked vertical transport field effect transistor (VTFET) | Chen Zhang, Joshua M. Rubin, Tenko Yamashita | 2020-11-10 |
| 10833079 | Dual transport orientation for stacked vertical transport field-effect transistors | Tenko Yamashita, Chen Zhang, Kangguo Cheng | 2020-11-10 |
| 10811322 | Different gate widths for upper and lower transistors in a stacked vertical transport field-effect transistor structure | Kangguo Cheng, Chen Zhang, Tenko Yamashita | 2020-10-20 |
| 10804368 | Semiconductor device having two-part spacer | Ruqiang Bao, Junli Wang, Dechao Guo, Ernest Y. Wu | 2020-10-13 |
| 10797163 | Leakage control for gate-all-around field-effect transistor devices | Lan Yu, Ruqiang Bao, Junli Wang, Dechao Guo | 2020-10-06 |
| 10777647 | Fin-type FET with low source or drain contact resistance | Kangguo Cheng, Juntao Li, Peng Xu | 2020-09-15 |
| 10727315 | Nanosheet transistor | Kangguo Cheng, Juntao Li, Peng Xu | 2020-07-28 |
| 10727323 | Three-dimensional (3D) tunneling field-effect transistor (FET) | Juntao Li, Kangguo Cheng, Peng Xu | 2020-07-28 |
| 10699959 | Integrating metal-insulator-metal capacitors with fabrication of vertical field effect transistors | Kangguo Cheng, Xuefeng Liu, Peng Xu | 2020-06-30 |
| 10692772 | Integrating metal-insulator-metal capacitors with fabrication of vertical field effect transistors | Kangguo Cheng, Xuefeng Liu, Peng Xu | 2020-06-23 |
| 10692778 | Gate-all-around FETs having uniform threshold voltage | Ruqiang Bao, Dechao Guo, Junli Wang | 2020-06-23 |
| 10693007 | Wrapped contacts with enhanced area | Kangguo Cheng, Zuoguang Liu, Peng Xu | 2020-06-23 |
| 10608096 | Formation of air gap spacers for reducing parasitic capacitance | Kangguo Cheng, Peng Xu, Choonghyun Lee | 2020-03-31 |
| 10573561 | Formation of stacked nanosheet semiconductor devices | Kangguo Cheng, Juntao Li, Peng Xu | 2020-02-25 |