Issued Patents All Time
Showing 126–150 of 168 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10566246 | Shared contact trench comprising dual silicide layers and dual epitaxial layers for source/drain layers of NFET and PFET devices | Kangguo Cheng, Junli Wang, Zuoguang Liu | 2020-02-18 |
| 10564125 | Self-aligned nanotips with tapered vertical sidewalls | Juntao Li, Kangguo Cheng, Peng Xu | 2020-02-18 |
| 10559491 | Fabrication of vertical transport fin field effect transistors with a self-aligned separator and an isolation region with an air gap | Kangguo Cheng, Zuoguang Liu, Sebastian Naczas, Peng Xu | 2020-02-11 |
| 10529850 | Vertical field-effect transistor including a fin having sidewalls with a tapered bottom profile | Chun Wing Yeung, Choonghyun Lee, Jingyun Zhang, Robin Hsin Kuo Chao | 2020-01-07 |
| 10522649 | Inverse T-shaped contact structures having air gap spacers | Kangguo Cheng, Choonghyun Lee, Juntao Li, Peng Xu | 2019-12-31 |
| 10516028 | Transistor with asymmetric spacers | Zhenxing Bi, Kangguo Cheng, Peng Xu | 2019-12-24 |
| 10510885 | Transistor with asymmetric source/drain overlap | Kangguo Cheng, Peng Xu, Zhenxing Bi | 2019-12-17 |
| 10490653 | Embedded bottom metal contact formed by a self-aligned contact process for vertical transistors | Su Chen Fan, Zuoguang Liu, Tenko Yamashita | 2019-11-26 |
| 10483382 | Tunnel transistor | Kangguo Cheng, Peng Xu, Zhenxing Bi | 2019-11-19 |
| 10453937 | Self-limited inner spacer formation for gate-all-around field effect transistors | Robinhsinku Chao, Choonghyun Lee, Chun Wing Yeung, Jingyun Zhang | 2019-10-22 |
| 10431667 | Vertical field effect transistors with uniform threshold voltage | Kangguo Cheng, Xin Miao, Peng Xu | 2019-10-01 |
| 10410928 | Homogeneous densification of fill layers for controlled reveal of vertical fins | Kangguo Cheng, Choonghyun Lee, Juntao Li, Peng Xu | 2019-09-10 |
| 10411094 | Method and structure for forming silicon germanium FinFET | Peng Xu, Kangguo Cheng, Juntao Li | 2019-09-10 |
| 10395994 | Equal spacer formation on semiconductor device | Juntao Li, Peng Xu, Kangguo Cheng, Choonghyun Lee | 2019-08-27 |
| 10388572 | Integrating metal-insulator-metal capacitors with fabrication of vertical field effect transistors | Kangguo Cheng, Xuefeng Liu, Peng Xu | 2019-08-20 |
| 10388569 | Formation of stacked nanosheet semiconductor devices | Kangguo Cheng, Juntao Li, Peng Xu | 2019-08-20 |
| 10381262 | Fabrication of vertical transport fin field effect transistors with a self-aligned separator and an isolation region with an air gap | Kangguo Cheng, Zuoguang Liu, Sebastian Naczas, Peng Xu | 2019-08-13 |
| 10374089 | Tensile strain in NFET channel | Peng Xu, Kangguo Cheng, Juntao Li | 2019-08-06 |
| 10355103 | Long channels for transistors | Robin Hsin Kuo Chao, Choonghyun Lee, Chun Wing Yeung, Jingyun Zhang | 2019-07-16 |
| 10347731 | Transistor with asymmetric spacers | Zhenxing Bi, Kangguo Cheng, Peng Xu | 2019-07-09 |
| 10347727 | Fin-type FET with low source or drain contact resistance | Kangguo Cheng, Juntao Li, Peng Xu | 2019-07-09 |
| 10332983 | Vertical field-effect transistors including uniform gate lengths | Kangguo Cheng, Choonghyun Lee, Juntao Li, Peng Xu | 2019-06-25 |
| 10332999 | Method and structure of forming fin field-effect transistor without strain relaxation | Kangguo Cheng, Juntao Li, Choonghyun Lee, Peng Xu | 2019-06-25 |
| 10326001 | Self-limited inner spacer formation for gate-all-around field effect transistors | Robinhsinku Chao, Choonghyun Lee, Chun Wing Yeung, Jingyun Zhang | 2019-06-18 |
| 10319835 | Embedded bottom metal contact formed by a self-aligned contact process for vertical transistors | Su Chen Fan, Zuoguang Liu, Tenko Yamashita | 2019-06-11 |