Issued Patents All Time
Showing 51–75 of 107 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10833190 | Super long channel device within VFET architecture | Marc A. Bergendahl, Kangguo Cheng, Gauri Karve, Fee Li Lie, John R. Sporre +1 more | 2020-11-10 |
| 10818663 | Fabrication of fin field effect transistors for complementary metal oxide semiconductor devices including separate n-type and p-type source/drains using a single spacer deposition | Kangguo Cheng, Fee Li Lie, Sean Teehan | 2020-10-27 |
| 10790393 | Utilizing multilayer gate spacer to reduce erosion of semiconductor Fin during spacer patterning | Andrew M. Greene, Hong He, Sivananda K. Kanakasabapathy, Gauri Karve, Pietro Montanini | 2020-09-29 |
| 10741452 | Controlling fin hardmask cut profile using a sacrificial epitaxial structure | Stuart A. Sieg, Yann Mignot, Indira Seshadri, Christopher J. Waskiewicz | 2020-08-11 |
| 10692776 | Formation of VTFET fin and vertical fin profile | Marc A. Bergendahl, Kangguo Cheng, Yann Mignot | 2020-06-23 |
| 10672668 | Dual width finned semiconductor structure | Yi Song, Jay William Strane, Fee Li Lie, Richard A. Conti | 2020-06-02 |
| 10615269 | Nanosheet channel-to-source and drain isolation | Marc A. Bergendahl, Kangguo Cheng, Fee Li Lie, John R. Sporre, Sean Teehan | 2020-04-07 |
| 10607991 | Air gap spacer for metal gates | Marc A. Bergendahl, Kangguo Cheng, Fee Li Lie, John R. Sporre, Sean Teehan | 2020-03-31 |
| 10573745 | Super long channel device within VFET architecture | Marc A. Bergendahl, Kangguo Cheng, Gauri Karve, Fee Li Lie, John R. Sporre +1 more | 2020-02-25 |
| 10553581 | Air gap spacer for metal gates | Marc A. Bergendahl, Kangguo Cheng, Fee Li Lie, John R. Sporre, Sean Teehan | 2020-02-04 |
| 10535529 | Semiconductor fin length variability control | Praveen Joseph, Ekmini Anuja De Silva, Stuart A. Sieg | 2020-01-14 |
| 10515837 | Method of wafer bonding of dissimilar thickness die | Sean P. Kilcoyne | 2019-12-24 |
| 10504777 | Method of manufacturing wafer level low melting temperature interconnections | Sean P. Kilcoyne, George Grama | 2019-12-10 |
| 10446452 | Method and structure for enabling controlled spacer RIE | Kangguo Cheng, Ryan O. Jung, Fee Li Lie, Jeffrey C. Shearer, John R. Sporre +1 more | 2019-10-15 |
| 10438972 | Sub-fin removal for SOI like isolation with uniform active fin height | Marc A. Bergendahl, Kangguo Cheng, Gauri Karve, Fee Li Lie, John R. Sporre +1 more | 2019-10-08 |
| 10424663 | Super long channel device within VFET architecture | Marc A. Bergendahl, Kangguo Cheng, Gauri Karve, Fee Li Lie, John R. Sporre +1 more | 2019-09-24 |
| 10396181 | Forming stacked nanowire semiconductor device | Marc A. Bergendahl, Kangguo Cheng, Fee Li Lie, Jeffrey C. Shearer, John R. Sporre +1 more | 2019-08-27 |
| 10381437 | Semiconductor device and method of forming the semiconductor device | Marc A. Bergendahl, Gauri Karve, Fee Li Lie, Robert R. Robison, John R. Sporre +1 more | 2019-08-13 |
| 10361129 | Self-aligned double patterning formed fincut | Stuart A. Sieg, Yann Mignot, Christopher J. Waskiewicz, Hemanth Jagannathan, Indira Seshadri | 2019-07-23 |
| 10355109 | Spacer formation on semiconductor device | Thamarai S. Devarajan, Sanjay C. Mehta, Soon-Cheon Seo | 2019-07-16 |
| 10304689 | Margin for fin cut using self-aligned triple patterning | Gauri Karve, Fee Li Lie, Stuart A. Sieg, John R. Sporre, Sean Teehan | 2019-05-28 |
| 10269931 | Vertical transport field effect transistor with precise gate length definition | Marc A. Bergendahl, Kangguo Cheng, Fee Li Lie, John R. Sporre, Sean Teehan | 2019-04-23 |
| 10256326 | Forming stacked nanowire semiconductor device | Marc A. Bergendahl, Kangguo Cheng, Fee Li Lie, Jeffrey C. Shearer, John R. Sporre +1 more | 2019-04-09 |
| 10256239 | Spacer formation preventing gate bending | Balasubramanian Pranatharthiharan, Soon-Cheon Seo, John R. Sporre | 2019-04-09 |
| 10249762 | Vertically aligned nanowire channels with source/drain interconnects for nanosheet transistors | Marc A. Bergendahl, Kangguo Cheng, John R. Sporre, Sean Teehan | 2019-04-02 |