Issued Patents All Time
Showing 76–100 of 107 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10249738 | Nanosheet channel-to-source and drain isolation | Marc A. Bergendahl, Kangguo Cheng, Fee Li Lie, John R. Sporre, Sean Teehan | 2019-04-02 |
| 10243079 | Utilizing multilayer gate spacer to reduce erosion of semiconductor fin during spacer patterning | Andrew M. Greene, Hong He, Sivananda K. Kanakasabapathy, Gauri Karve, Pietro Montanini | 2019-03-26 |
| 10199503 | Under-channel gate transistors | Marc A. Bergendahl, Kangguo Cheng, Gauri Karve, Fee Li Lie, John R. Sporre +1 more | 2019-02-05 |
| 10167558 | Phase shifted gas delivery for high throughput and cost effectiveness associated with atomic layer etching and atomic layer deposition | Fee Li Lie, Siva Kanakasabapathy, Hyung Joo Shin | 2019-01-01 |
| 10141445 | Vertically aligned nanowire channels with source/drain interconnects for nanosheet transistors | Marc A. Bergendahl, Kangguo Cheng, John R. Sporre, Sean Teehan | 2018-11-27 |
| 10121785 | Pitch scalable active area patterning structure and process for multi-channel fin FET technologies | Sivananda K. Kanakasabapathy, Fee Li Lie, Stuart A. Sieg | 2018-11-06 |
| 10109722 | Etch-resistant spacer formation on gate structure | Ruilong Xie, Zhenxing Bi, Pietro Montanini, Balasubramanian Pranatharthiharan, Oleg Gluschenkov +2 more | 2018-10-23 |
| 10083962 | Fabrication of fin field effect transistors for complementary metal oxide semiconductor devices including separate n-type and p-type source/drains using a single spacer deposition | Kangguo Cheng, Fee Li Lie, Sean Teehan | 2018-09-25 |
| 10074730 | Forming stacked nanowire semiconductor device | Marc A. Bergendahl, Kangguo Cheng, Fee Li Lie, Jeffrey C. Shearer, John R. Sporre +1 more | 2018-09-11 |
| 10043801 | Air gap spacer for metal gates | Marc A. Bergendahl, Kangguo Cheng, Fee Li Lie, John R. Sporre, Sean Teehan | 2018-08-07 |
| 10014391 | Vertical transport field effect transistor with precise gate length definition | Marc A. Bergendahl, Kangguo Cheng, Fee Li Lie, John R. Sporre, Sean Teehan | 2018-07-03 |
| 9997369 | Margin for fin cut using self-aligned triple patterning | Gauri Karve, Fee Li Lie, Stuart A. Sieg, John R. Sporre, Sean Teehan | 2018-06-12 |
| 9985138 | Vertically aligned nanowire channels with source/drain interconnects for nanosheet transistors | Marc A. Bergendahl, Kangguo Cheng, John R. Sporre, Sean Teehan | 2018-05-29 |
| 9917196 | Semiconductor device and method of forming the semiconductor device | Marc A. Bergendahl, Gauri Karve, Fee Li Lie, Robert R. Robison, John R. Sporre +1 more | 2018-03-13 |
| 9911831 | Spacer formation on semiconductor device | Thamarai S. Devarajan, Sanjay C. Mehta, Soon-Cheon Seo | 2018-03-06 |
| 9905643 | Vertically aligned nanowire channels with source/drain interconnects for nanosheet transistors | Marc A. Bergendahl, Kangguo Cheng, John R. Sporre, Sean Teehan | 2018-02-27 |
| 9893166 | Dummy gate formation using spacer pull down hardmask | Marc A. Bergendahl, Kangguo Cheng, Fee Li Lie, John R. Sporre, Sean Teehan | 2018-02-13 |
| 9786666 | Method to form dual channel semiconductor material fins | Kangguo Cheng, Ryan O. Jung, Fee Li Lie, John R. Sporre, Sean Teehan | 2017-10-10 |
| 9754942 | Single spacer for complementary metal oxide semiconductor process flow | Marc A. Bergendahl, Kangguo Cheng, Jessica Dechene, Fee Li Lie, Jeffrey C. Shearer +2 more | 2017-09-05 |
| 9748146 | Single spacer for complementary metal oxide semiconductor process flow | Marc A. Bergendahl, Kangguo Cheng, Jessica Dechene, Fee Li Lie, Jeffrey C. Shearer +2 more | 2017-08-29 |
| 9728622 | Dummy gate formation using spacer pull down hardmask | Marc A. Bergendahl, Kangguo Cheng, Fee Li Lie, John R. Sporre, Sean Teehan | 2017-08-08 |
| 9716184 | Enabling large feature alignment marks with sidewall image transfer patterning | Kangguo Cheng, Sivananda K. Kanakasabapathy, Fee Li Lie, Jeffrey C. Shearer, John R. Sporre +1 more | 2017-07-25 |
| 9627277 | Method and structure for enabling controlled spacer RIE | Kangguo Cheng, Ryan O. Jung, Fee Li Lie, Jeffrey C. Shearer, John R. Sporre +1 more | 2017-04-18 |
| 9620590 | Nanosheet channel-to-source and drain isolation | Marc A. Bergendahl, Kangguo Cheng, Fee Li Lie, John R. Sporre, Sean Teehan | 2017-04-11 |
| 9608065 | Air gap spacer for metal gates | Marc A. Bergendahl, Kangguo Cheng, Fee Li Lie, John R. Sporre, Sean Teehan | 2017-03-28 |