Issued Patents All Time
Showing 101–125 of 230 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7696025 | Sidewall semiconductor transistors | Huilong Zhu, Lawrence A. Clevenger, Omer H. Dokumaci, Kaushik A. Kumar, Carl Radens | 2010-04-13 |
| 7691712 | Semiconductor device structures incorporating voids and methods of fabricating such structures | Ricardo A. Donaton, Jack A. Mandelman | 2010-04-06 |
| 7691698 | Pseudomorphic Si/SiGe/Si body device with embedded SiGe source/drain | Anda C. Mocuta, Dan M. Mocuta, Carl Radens | 2010-04-06 |
| 7687829 | Stressed field effect transistors on hybrid orientation substrate | Judson R. Holt, Meikei Ieong, Qiqing C. Ouyang, Siddhartha Panda | 2010-03-30 |
| 7683428 | Vertical Fin-FET MOS devices | Jochen Beintner, Ramachandra Divakaruni | 2010-03-23 |
| 7675118 | Semiconductor structure with enhanced performance using a simplified dual stress liner configuration | Yaocheng Liu, William K. Henson | 2010-03-09 |
| 7659581 | Transistor with dielectric stressor element fully underlying the active semiconductor region | Brian J. Greene, Kern Rim | 2010-02-09 |
| 7659160 | Field effect transistors (FETS) with inverted source/drain metallic contacts, and method of fabrication same | Michael P. Belyansky, Lawrence A. Clevenger, Kaushik A. Kumar, Carl Radens | 2010-02-09 |
| 7655972 | Structure and method for MOSFET with reduced extension resistance | Carl Radens | 2010-02-02 |
| 7655511 | Gate electrode stress control for finFET performance enhancement | — | 2010-02-02 |
| 7648871 | Field effect transistors (FETS) with inverted source/drain metallic contacts, and method of fabricating same | Michael P. Belyansky, Lawrence A. Clevenger, Kaushik A. Kumar, Carl Radens | 2010-01-19 |
| 7645656 | Structure and method for making strained channel field effect transistor using sacrificial spacer | Huajie Chen, Sang-Hyun Oh, Siddhartha Panda, Werner Rausch, Tsutomu Sato +1 more | 2010-01-12 |
| 7632724 | Stressed SOI FET having tensile and compressive device regions | William K. Henson, Yaocheng Liu | 2009-12-15 |
| 7618853 | Field effect transistors with dielectric source drain halo regions and reduced miller capacitance | Michael P. Belyansky, Oleg Gluschenkov | 2009-11-17 |
| 7615454 | Embedded stressed nitride liners for CMOS performance improvement | Omer H. Dokumaci | 2009-11-10 |
| 7615418 | High performance stress-enhance MOSFET and method of manufacture | Ricardo A. Donaton, William K. Henson, Kern Rim | 2009-11-10 |
| 7608489 | High performance stress-enhance MOSFET and method of manufacture | Ricardo A. Donaton, William K. Henson, Kern Rim | 2009-10-27 |
| 7573104 | CMOS device on hybrid orientation substrate comprising equal mobility for perpendicular devices of each type | — | 2009-08-11 |
| 7560326 | Silicon/silcion germaninum/silicon body device with embedded carbon dopant | Anda C. Mocuta, Ricardo A. Donaton, David M. Onsongo, Kern Rim | 2009-07-14 |
| 7560328 | Strained Si on multiple materials for bulk or SOI substrates | Omer H. Dokumaci, Oleg Gluschenkov, Huilong Zhu | 2009-07-14 |
| 7550323 | Electrical fuse with a thinned fuselink middle portion | William K. Henson, Deok-kee Kim, Chandrasekharan Kothandaraman | 2009-06-23 |
| 7550364 | Stress engineering using dual pad nitride with selective SOI device architecture | William K. Henson, Kern Rim, William C. Wille | 2009-06-23 |
| 7544577 | Mobility enhancement in SiGe heterojunction bipolar transistors | Thomas N. Adam | 2009-06-09 |
| 7538391 | Curved FINFETs | Shreesh Narasimha, Edward J. Nowak, John J. Pekarik, Jeffrey W. Sleight, Richard Q. Williams | 2009-05-26 |
| 7534667 | Structure and method for fabrication of deep junction silicon-on-insulator transistors | Brian J. Greene, John J. Ellis-Monaghan | 2009-05-19 |