Issued Patents All Time
Showing 226–250 of 767 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9589849 | Methods of modulating strain in PFET and NFET FinFET semiconductor devices | Ajey Poovannummoottil Jacob, Murat Kerem Akarvardar, Ali Khakifirooz | 2017-03-07 |
| 9583628 | Semiconductor device with a low-K spacer and method of forming the same | Kangguo Cheng, Ali Khakifirooz, Douglas C. La Tulipe, Jr. | 2017-02-28 |
| 9583507 | Adjacent strained <100> NFET fins and <110> PFET fins | Kangguo Cheng, Pouya Hashemi, Alexander Reznicek | 2017-02-28 |
| 9583492 | Structure and method for advanced bulk fin isolation | Kangguo Cheng, Ali Khakifirooz, Darsen D. Lu, Alexander Reznicek, Kern Rim | 2017-02-28 |
| 9577038 | Structure and method to minimize junction capacitance in nano sheets | Terence B. Hook, Xin Miao | 2017-02-21 |
| 9576979 | Preventing strained fin relaxation by sealing fin ends | Kangguo Cheng, Hong He, Sivananda K. Kanakasabapathy, Gauri Karve, Juntao Li +3 more | 2017-02-21 |
| 9570590 | Selective oxidation of buried silicon-germanium to form tensile strained silicon FinFETs | Alexander Reznicek, Joshua M. Rubin, Tenko Yamashita | 2017-02-14 |
| 9570465 | Dual STI integrated circuit including FDSOI transistors and method for manufacturing the same | Maud Vinet, Kangguo Cheng, Laurent Grenouillet, Ali Khakifirooz, Yannick Le Tiec +1 more | 2017-02-14 |
| 9570360 | Dual channel material for finFET for high performance CMOS | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2017-02-14 |
| 9564486 | Self-aligned dual-height isolation for bulk FinFET | Murat Kerem Akarvardar, Steven Bentley, Kangguo Cheng, Jody A. Fronheiser, Ajey Poovannummoottil Jacob +2 more | 2017-02-07 |
| 9564445 | Dummy gate structure for electrical isolation of a fin DRAM | John E. Barth, Jr., Kangguo Cheng, Herbert L. Ho, Ali Khakifirooz, Babar A. Khan +4 more | 2017-02-07 |
| 9564439 | Structure and method for advanced bulk fin isolation | Kangguo Cheng, Ali Khakifirooz, Darsen D. Lu, Alexander Reznicek, Kern Rim | 2017-02-07 |
| 9559119 | High voltage metal oxide semiconductor field effect transistor integrated into extremely thin semiconductor on insulator process | Kangguo Cheng, Ali Khakifirooz, Ghavam G. Shahidi | 2017-01-31 |
| 9548386 | Structure and method for compressively strained silicon germanium fins for pFET devices and tensily strained silicon fins for nFET devices | Kangguo Cheng, Ali Khakifirooz, Darsen D. Lu, Alexander Reznicek, Kern Rim | 2017-01-17 |
| 9548356 | Shallow trench isolation structures | Kangguo Cheng, Balasubramanian S. Haran, Ali Khakifirooz, Pranita Kerber, Arvind Kumar +1 more | 2017-01-17 |
| 9548213 | Dielectric isolated fin with improved fin profile | Kangguo Cheng, Darsen D. Lu, Ali Khakifirooz, Kern Rim | 2017-01-17 |
| 9543323 | Strain release in PFET regions | Kangguo Cheng, Ali Khakifirooz, Darsen D. Lu, Alexander Reznicek, Kern Rim | 2017-01-10 |
| 9543302 | Forming IV fins and III-V fins on insulator | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2017-01-10 |
| 9536986 | Enriched, high mobility strained fin having bottom dielectric isolation | Hong He, Juntao Li, Junli Wang, Chih-Chao Yang | 2017-01-03 |
| 9536990 | Methods of forming replacement fins for a FinFET device using a targeted thickness for the patterned fin etch mask | Murat Kerem Akarvardar, Jody A. Fronheiser | 2017-01-03 |
| 9520397 | Abrupt source/drain junction formation using a diffusion facilitation layer | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2016-12-13 |
| 9520328 | Type III-V and type IV semiconductor device formation | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2016-12-13 |
| 9515141 | FinFET device with channel strain | Hong He, Sivananda K. Kanakasabapathy, Gauri Karve, Fee Li Lie | 2016-12-06 |
| 9515138 | Structure and method to minimize junction capacitance in nano sheets | Terence B. Hook, Xin Miao | 2016-12-06 |
| 9515171 | Radiation tolerant device structure | Ali Khakifirooz, Darsen D. Lu, Philip J. Oldiges | 2016-12-06 |