Issued Patents All Time
Showing 276–300 of 767 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9437680 | Silicon-on-insulator substrates having selectively formed strained and relaxed device regions | Kangguo Cheng, Ali Khakifirooz, Devendra K. Sadana | 2016-09-06 |
| 9431514 | FinFET device having a high germanium content fin structure and method of making same | Qing Liu, Gauri Karve | 2016-08-30 |
| 9431305 | Vertical transistor fabrication and devices | Brent A. Anderson, Seong-Dong Kim, Rajasekhar Venigalla | 2016-08-30 |
| 9431306 | Methods of forming fin isolation regions on FinFET semiconductor devices using an oxidation-blocking layer of material and by performing a fin-trimming process | Ajey Poovannummoottil Jacob, Kangguo Cheng, Ali Khakifirooz, Kern Rim | 2016-08-30 |
| 9431266 | Double patterning method | Kangguo Cheng, Ali Khakifirooz, Ying Zhang | 2016-08-30 |
| 9419078 | Floating body memory with asymmetric channel | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2016-08-16 |
| 9418841 | Type III-V and type IV semiconductor device formation | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2016-08-16 |
| 9406748 | Perfectly shaped controlled nanowires | Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi, Alexander Reznicek | 2016-08-02 |
| 9401372 | Dual isolation on SSOI wafer | Hong He, Ali Khakifirooz, Junli Wang | 2016-07-26 |
| 9401334 | Preventing unauthorized use of integrated circuits for radiation-hard applications | Kangguo Cheng, Ali Khakifirooz, Kenneth P. Rodbell | 2016-07-26 |
| 9401311 | Self aligned structure and method for high-K metal gate work function tuning | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2016-07-26 |
| 9391077 | SiGe and Si FinFET structures and methods for making the same | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2016-07-12 |
| 9391069 | MIM capacitor with enhanced capacitance formed by selective epitaxy | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek, Raghavasimhan Sreenivasan | 2016-07-12 |
| 9391091 | MOSFET with work function adjusted metal backgate | Kangguo Cheng, Pranita Kerber, Ali Khakifirooz | 2016-07-12 |
| 9379218 | Fin formation in fin field effect transistors | Kangguo Cheng, Hong He, Ali Khakifirooz, Yunpeng Yin | 2016-06-28 |
| 9378972 | Integration of dense and variable pitch fin structures | Kangguo Cheng, Matthew E. Colburn, Ali Khakifirooz | 2016-06-28 |
| 9378948 | FinFET structures having silicon germanium and silicon fins | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2016-06-28 |
| 9373639 | Thin channel-on-insulator MOSFET device with n+ epitaxy substrate and embedded stressor | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2016-06-21 |
| 9373507 | Defective P-N junction for backgated fully depleted silicon on insulator mosfet | Kangguo Cheng, Laurent Grenouillet, Ali Khakifirooz, Yannick Le Tiec, Qing Liu +1 more | 2016-06-21 |
| 9362400 | Semiconductor device including dielectrically isolated finFETs and buried stressor | Kangguo Cheng, Ali Khakifirooz, Darsen D. Lu, Alexander Reznicek, Kern Rim | 2016-06-07 |
| 9362355 | Nanosheet MOSFET with full-height air-gap spacer | Kangguo Cheng, Michael A. Guillorn, Xin Miao | 2016-06-07 |
| 9362310 | Method of manufacturing a FinFET device using a sacrificial epitaxy region for improved fin merge and FinFET device formed by same | Thomas N. Adam, Kangguo Cheng, Hong He, Ali Khakifirooz, Alexander Reznicek | 2016-06-07 |
| 9362182 | Forming strained fins of different material on a substrate | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2016-06-07 |
| 9356119 | MOSFETs with reduced contact resistance | Kangguo Cheng, Ali Khakifirooz, Pranita Kerber | 2016-05-31 |
| 9356046 | Structure and method for forming CMOS with NFET and PFET having different channel materials | Kangguo Cheng, Steven J. Holmes, Ali Khakifirooz | 2016-05-31 |