Issued Patents All Time
Showing 326–350 of 767 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9299777 | Gate-all-around nanowire MOSFET and method of formation | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2016-03-29 |
| 9299719 | CMOS with dual raised source and drain for NMOS and PMOS | Kangguo Cheng, Balasubramanian S. Haran, Ali Khakifirooz | 2016-03-29 |
| 9299618 | Structure and method for advanced bulk fin isolation | Kangguo Cheng, Ali Khakifirooz, Darsen D. Lu, Alexander Reznicek, Kern Rim | 2016-03-29 |
| 9293532 | Gate-all-around nanowire MOSFET and method of formation | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2016-03-22 |
| 9293474 | Dual channel hybrid semiconductor-on-insulator semiconductor devices | Kangguo Cheng, Ali Khakifirooz, Qing Liu, Laurent Grenouillet, Yannick Le Tiec +1 more | 2016-03-22 |
| 9293583 | Finfet with oxidation-induced stress | Kangguo Cheng, Ali Khakifirooz, Kern Rim | 2016-03-22 |
| 9293588 | FinFET with a silicon germanium alloy channel and method of fabrication thereof | Kangguo Cheng, Hong He, Ali Khakifirooz | 2016-03-22 |
| 9287135 | Sidewall image transfer process for fin patterning | Hong He, Sivananda K. Kanakasabapathy, Alexander Reznicek | 2016-03-15 |
| 9287130 | Method for single fin cuts using selective ion implants | Xiuyu Cai, Ajey Poovannummoottil Jacob, Ruilong Xie, Kangguo Cheng, Jason R. Cantone +7 more | 2016-03-15 |
| 9281381 | Forming strained and relaxed silicon and silicon germanium fins on the same wafer | Veeraraghavan S. Basker, Ali Khakifirooz, Tenko Yamashita, Chun-Chen Yeh | 2016-03-08 |
| 9281247 | Strained silicon and strained silicon germanium on insulator field-effect transistor | Stephen W. Bedell, Kangguo Cheng, Ali Khakifirooz, Devendra K. Sadana | 2016-03-08 |
| 9276113 | Structure and method to make strained FinFET with improved junction capacitance and low leakage | Kangguo Cheng, Ali Khakifirooz, Darsen D. Lu, Alexander Reznicek, Kern Rim | 2016-03-01 |
| 9276079 | Semiconductor device exhibiting reduced parasitics and method for making same | Kangguo Cheng, Keith Kwong Hon-Wong | 2016-03-01 |
| 9276013 | Integrated formation of Si and SiGe fins | Hong He, Juntao Li, Junli Wang, Chih-Chao Yang | 2016-03-01 |
| 9275854 | Compound semiconductor integrated circuit and method to fabricate same | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2016-03-01 |
| 9269634 | Self-aligned metal gate CMOS with metal base layer and dummy gate structure | Kangguo Cheng, Ying Zhang | 2016-02-23 |
| 9269589 | Dense finFET SRAM | Kangguo Cheng, Ali Khakifirooz, Ghavam G. Shahidi | 2016-02-23 |
| 9269575 | Trench sidewall protection for selective epitaxial semiconductor material formation | Kangguo Cheng, Hong He, Ali Khakifirooz | 2016-02-23 |
| 9263584 | Field effect transistors employing a thin channel region on a crystalline insulator structure | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2016-02-16 |
| 9263466 | CMOS with dual raised source and drain for NMOS and PMOS | Kangguo Cheng, Balasubramanian S. Haran, Ali Khakifirooz | 2016-02-16 |
| 9263465 | CMOS with dual raised source and drain for NMOS and PMOS | Kangguo Cheng, Balasubramanian S. Haran, Ali Khakifirooz | 2016-02-16 |
| 9263453 | Secondary use of aspect ratio trapping holes as eDRAM structure | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2016-02-16 |
| 9252052 | Dual shallow trench isolation liner for preventing electrical shorts | Shom Ponoth, Prasanna Khare, Qing Liu, Nicolas Loubet, Maud Vinet | 2016-02-02 |
| 9252017 | Stacked nanowire | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2016-02-02 |
| 9252016 | Stacked nanowire | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2016-02-02 |