Issued Patents All Time
Showing 301–325 of 767 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9349861 | Silicon-on-insulator substrates having selectively formed strained and relaxed device regions | Kangguo Cheng, Ali Khakifirooz, Devendra K. Sadana | 2016-05-24 |
| 9349808 | Double aspect ratio trapping | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2016-05-24 |
| 9349798 | CMOS structures with selective tensile strained NFET fins and relaxed PFET fins | Hong He, Ali Khakifirooz, Joshua M. Rubin | 2016-05-24 |
| 9349730 | Fin transformation process and isolation structures facilitating different Fin isolation schemes | Ajey Poovannummoottil Jacob, Kangguo Cheng, Nicolas Loubet, Prasanna Khare, Ramachandra Divakaruni | 2016-05-24 |
| 9349658 | Methods of forming fin isolation regions on finFET semiconductor devices using an oxidation-blocking layer of material | Ajey Poovannummoottil Jacob, Kangguo Cheng, Ali Khakifirooz, Kern Rim | 2016-05-24 |
| 9337315 | FinFET spacer formation by oriented implantation | Veeraraghavan S. Basker, Kangguo Cheng, Johnathan E. Faltermeier | 2016-05-10 |
| 9337259 | Structure and method to improve ETSOI MOSFETS with back gate | Kangguo Cheng, Pranita Kerber, Ali Khakifirooz, Balasubramanian Pranatharthiharan | 2016-05-10 |
| 9337022 | Virtual relaxed substrate on edge-relaxed composite semiconductor pillars | Murat Kerem Akarvardar, Jody A. Fronheiser | 2016-05-10 |
| 9331201 | Multi-height FinFETs with coplanar topography background | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2016-05-03 |
| 9331174 | Method for improving device performance using epitaxially grown silicon carbon (SiC) or silicon-germanium (SiGe) | Johnathan E. Faltermeier, Lahir M. Shaik Adam, Balasubramanian S. Haran | 2016-05-03 |
| 9331148 | FinFET device with channel strain | Hong He, Sivananda K. Kanakasabapathy, Gauri Karve, Fee Li Lie | 2016-05-03 |
| 9324867 | Method to controllably etch silicon recess for ultra shallow junctions | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2016-04-26 |
| 9324797 | Gate-all-around nanowire MOSFET and method of formation | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2016-04-26 |
| 9324796 | Gate-all-around nanowire MOSFET and method of formation | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2016-04-26 |
| 9324795 | Gate-all-around nanowire MOSFET and method of formation | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2016-04-26 |
| 9324790 | Self-aligned dual-height isolation for bulk FinFET | Murat Kerem Akarvardar, Steven Bentley, Kangguo Cheng, Jody A. Fronheiser, Ajey Poovannummoottil Jacob +2 more | 2016-04-26 |
| 9324618 | Methods of forming replacement fins for a FinFET device | Murat Kerem Akarvardar, Jody A. Fronheiser | 2016-04-26 |
| 9318580 | U-shaped semiconductor structure | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz | 2016-04-19 |
| 9318578 | FinFET spacer formation by oriented implantation | Veeraraghavan S. Basker, Kangguo Cheng, Johnathan E. Faltermeier | 2016-04-19 |
| 9318489 | Complex circuits utilizing fin structures | Kangguo Cheng, Ali Khakifirooz, Kern Rim | 2016-04-19 |
| 9312367 | FinFET with a silicon germanium alloy channel and method of fabrication thereof | Kangguo Cheng, Hong He, Ali Khakifirooz | 2016-04-12 |
| 9312173 | Self-limiting silicide in highly scaled fin technology | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2016-04-12 |
| 9312128 | Compound semiconductor integrated circuit and method to fabricate same | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2016-04-12 |
| 9305846 | Device isolation in FinFET CMOS | Ajey Poovannummoottil Jacob, Murat Kerem Akarvardar, Steven Bentley, Toshiharu Nagumo, Kangguo Cheng +1 more | 2016-04-05 |
| 9299787 | Forming IV fins and III-V fins on insulator | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2016-03-29 |