Issued Patents All Time
Showing 351–375 of 767 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9252014 | Trench sidewall protection for selective epitaxial semiconductor material formation | Kangguo Cheng, Hong He, Ali Khakifirooz | 2016-02-02 |
| 9245981 | Dielectric filler fins for planar topography in gate level | Kangguo Cheng, Ramachandra Divakaruni, Ali Khakifirooz, Edward J. Nowak, Kern Rim | 2016-01-26 |
| 9245903 | High voltage metal oxide semiconductor field effect transistor integrated into extremely thin semiconductor on insulator process | Kangguo Cheng, Ali Khakifirooz, Ghavam G. Shahidi | 2016-01-26 |
| 9245807 | Integrated circuit with a thin body field effect transistor and capacitor | Kangguo Cheng, Ali Khakifirooz, Ghavam G. Shahidi | 2016-01-26 |
| 9236463 | Compressive strained III-V complementary metal oxide semiconductor (CMOS) device | Thomas N. Adam, Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2016-01-12 |
| 9219078 | Simplified multi-threshold voltage scheme for fully depleted SOI MOSFETs | Kangguo Cheng, Ali Khakifirooz, Qing Liu, Nicolas Loubet, Scott Luning | 2015-12-22 |
| 9219129 | Inverted thin channel mosfet with self-aligned expanded source/drain | Kangguo Cheng, Ali Khakifirooz, Douglas C. La Tulipe, Jr. | 2015-12-22 |
| 9219154 | Method of fabricating electrostatically enhanced fins and stacked nanowire field effect transistors | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2015-12-22 |
| 9214378 | Undercut insulating regions for silicon-on-insulator device | Kangguo Cheng, Balasubramanian S. Haran, Shom Ponoth, Theodorus E. Standaert, Tenko Yamashita | 2015-12-15 |
| 9214397 | Structure and method to modulate threshold voltage for high-K metal gate field effect transistors (FETs) | Kangguo Cheng, Steven J. Holmes, Ali Khakifirooz, Pranita Kerber, Shom Ponoth +2 more | 2015-12-15 |
| 9214567 | Nanowire compatible E-fuse | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2015-12-15 |
| 9209065 | Engineered substrate and device for co-integration of strained silicon and relaxed silicon | Kangguo Cheng, Ali Khakifirooz, Darsen D. Lu, Alexander Reznicek | 2015-12-08 |
| 9202893 | U-shaped semiconductor structure | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz | 2015-12-01 |
| 9202812 | Abrupt source/drain junction formation using a diffusion facilitation layer | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2015-12-01 |
| 9190411 | Retrograde doped layer for device isolation | Ajey Poovannummoottil Jacob, Steven Bentley, Murat Kerem Akarvardar, Jody A. Fronheiser, Kangguo Cheng +2 more | 2015-11-17 |
| 9190313 | Shallow trench isolation structures | Kangguo Cheng, Balasubramanian S. Haran, Ali Khakifirooz, Pranita Kerber, Arvind Kumar +1 more | 2015-11-17 |
| 9190329 | Complex circuits utilizing fin structures | Kangguo Cheng, Ali Khakifirooz, Kern Rim | 2015-11-17 |
| 9184179 | Thin channel-on-insulator MOSFET device with n+ epitaxy substrate and embedded stressor | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2015-11-10 |
| 9184214 | Semiconductor device exhibiting reduced parasitics and method for making same | Kangguo Cheng, Keith Kwong Hon Wong | 2015-11-10 |
| 9178068 | FinFET with oxidation-induced stress | Kangguo Cheng, Ali Khakifirooz, Kern Rim | 2015-11-03 |
| 9171757 | Dual shallow trench isolation liner for preventing electrical shorts | Shom Ponoth, Prasanna Khare, Qing Liu, Nicolas Loubet, Maud Vinet | 2015-10-27 |
| 9153647 | Integrated circuit having heterostructure FinFET with tunable device parameters and method to fabricate same | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2015-10-06 |
| 9129938 | Methods of forming germanium-containing and/or III-V nanowire gate-all-around transistors | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2015-09-08 |
| 9117875 | Methods of forming isolated germanium-containing fins for a FinFET semiconductor device | Ajey Poovannummoottil Jacob, Murat Kerem Akarvardar, Jody A. Fronheiser, Kangguo Cheng, Kern Rim | 2015-08-25 |
| 9105691 | Contact isolation scheme for thin buried oxide substrate devices | Kangguo Cheng, Laurent Grenouillet, Ali Khakifirooz, Yannick Le Tiec, Qing Liu +1 more | 2015-08-11 |