Issued Patents All Time
Showing 401–425 of 767 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9018714 | Integrated circuit having raised source drains devices with reduced silicide contact resistance and methods to fabricate same | Kangguo Cheng, Ali Khakifirooz, Pranita Kerber, Christian Lavoie | 2015-04-28 |
| 9018052 | Integrated circuit including DRAM and SRAM/logic | Veeraraghavan S. Basker, Kangguo Cheng, Terence B. Hook, Ali Khakifirooz, Pranita Kerber +2 more | 2015-04-28 |
| 9006816 | Memory device having multiple dielectric gate stacks and related methods | Prasanna Khare, Stephane Allegret-Maret, Nicolas Loubet, Qing Liu, Hemanth Jagannathan +2 more | 2015-04-14 |
| 9006789 | Compressive strained III-V complementary metal oxide semiconductor (CMOS) device | Thomas N. Adam, Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2015-04-14 |
| 9006071 | Thin channel MOSFET with silicide local interconnect | Kangguo Cheng, Ali Khakifirooz, Ghavam G. Shahidi | 2015-04-14 |
| 9006054 | Lateral diode compatible with FinFET and method to fabricate same | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2015-04-14 |
| 8999791 | Formation of semiconductor structures with variable gate lengths | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2015-04-07 |
| 8994085 | Integrated circuit including DRAM and SRAM/logic | Veeraraghavan S. Basker, Kangguo Cheng, Terence B. Hook, Ali Khakifirooz, Pranita Kulkarni +2 more | 2015-03-31 |
| 8993399 | FinFET structures having silicon germanium and silicon fins | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2015-03-31 |
| 8975125 | Formation of bulk SiGe fin with dielectric isolation by anodization | Thomas N. Adam, Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2015-03-10 |
| 8969966 | Defective P-N junction for backgated fully depleted silicon on insulator MOSFET | Kangguo Cheng, Laurent Grenouillet, Ali Khakifirooz, Yannick Le Tiec, Qing Liu +1 more | 2015-03-03 |
| 8969938 | Method and structure for forming on-chip high quality capacitors with ETSOI transistors | Kangguo Cheng, Ali Khakifirooz, Ghavam G. Shahidi | 2015-03-03 |
| 8969934 | Gate-all-around nanowire MOSFET and method of formation | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2015-03-03 |
| 8969155 | Fin structure with varying isolation thickness | Kangguo Cheng, Ali Khakifirooz, Kern Rim | 2015-03-03 |
| 8963259 | Device isolation in finFET CMOS | Ajey Poovannummoottil Jacob, Murat Kerem Akarvardar, Steven Bentley, Toshiharu Nagumo, Kangguo Cheng +1 more | 2015-02-24 |
| 8962434 | Field effect transistors with varying threshold voltages | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek, Thomas N. Adam | 2015-02-24 |
| 8962430 | Method for the formation of a protective dual liner for a shallow trench isolation structure | Qing Liu, Nicolas Loubet | 2015-02-24 |
| 8962412 | Integrated circuit having raised source drains devices with reduced silicide contact resistance and methods to fabricate same | Kangguo Cheng, Ali Khakifirooz, Pranita Kerber, Christian Lavoie | 2015-02-24 |
| 8956932 | U-shaped semiconductor structure | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz | 2015-02-17 |
| 8951870 | Forming strained and relaxed silicon and silicon germanium fins on the same wafer | Veeraraghavan S. Basker, Ali Khakifirooz, Tenko Yamashita, Chun-Chen Yeh | 2015-02-10 |
| 8946010 | Three dimensional FET devices having different device widths | Kangguo Cheng, Ali Khakifirooz, Pranita Kerber | 2015-02-03 |
| 8946007 | Inverted thin channel mosfet with self-aligned expanded source/drain | Kangguo Cheng, Ali Khakifirooz, Douglas C. La Tulipe, Jr. | 2015-02-03 |
| 8933515 | Device structure, layout and fabrication method for uniaxially strained transistors | Stephen W. Bedell, Huiming Bu, Kangguo Cheng, Johnathan E. Faltermeier, Ali Khakifirooz +2 more | 2015-01-13 |
| 8927387 | Robust isolation for thin-box ETSOI MOSFETS | Kangguo Cheng, Balasubramanian S. Haran, Sanjay C. Mehta, Stefan Schmitz | 2015-01-06 |
| 8927363 | Integrating channel SiGe into pFET structures | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2015-01-06 |