Issued Patents All Time
Showing 426–450 of 767 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8916443 | Semiconductor device with epitaxial source/drain facetting provided at the gate edge | Thomas N. Adam, Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2014-12-23 |
| 8901672 | Transistor having all-around source/drain metal contact channel stressor and method to fabricate same | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2014-12-02 |
| 8901664 | High-K/metal gate CMOS finFET with improved pFET threshold voltage | Veeraraghavan S. Basker, Kangguo Cheng, Johnathan E. Faltermeier, Ali Khakifirooz | 2014-12-02 |
| 8901619 | Asymmetric FinFET devices | Kangguo Cheng, Ying Zhang | 2014-12-02 |
| 8900951 | Gate-all-around nanowire MOSFET and method of formation | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2014-12-02 |
| 8900936 | FinFET device having reduce capacitance, access resistance, and contact resistance | Pranita Kulkarni, Ali Khakifirooz, Kangguo Cheng, Ghavam G. Shahidi, Hemanth Jagannathan | 2014-12-02 |
| 8896032 | Self-aligned biosensors with enhanced sensitivity | Kangguo Cheng, Ali Khakifirooz, Raghavasimhan Sreenivasan, Sufi Zafar | 2014-11-25 |
| 8895381 | Method of co-integration of strained-Si and relaxed Si or strained SiGe FETs on insulator with planar and non-planar architectures | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2014-11-25 |
| 8895379 | Integrated circuit having raised source drains devices with reduced silicide contact resistance and methods to fabricate same | Kangguo Cheng, Ali Khakifirooz, Pranita Kulkarni, Christian Lavoie | 2014-11-25 |
| 8890245 | Raised source/drain structure for enhanced strain coupling from stress liner | Kangguo Cheng, Ali Khakifirooz, Pranita Kulkarni, Ghavam G. Shahidi | 2014-11-18 |
| 8889562 | Double patterning method | Kangguo Cheng, Ali Khakifirooz, Ying Zhang | 2014-11-18 |
| 8878311 | Integrated circuit having raised source drains devices with reduced silicide contact resistance and methods to fabricate same | Kangguo Cheng, Ali Khakifirooz, Pranita Kerber, Christian Lavoie | 2014-11-04 |
| 8871596 | Method of multiple patterning to form semiconductor devices | Kuang-Jung Chen, Kangguo Cheng, Steven J. Holmes, Sen Liu | 2014-10-28 |
| 8866227 | Thin semiconductor-on-insulator MOSFET with co-integrated silicon, silicon germanium and silicon doped with carbon channels | Thomas N. Adam, Stephen W. Bedell, Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek +2 more | 2014-10-21 |
| 8865561 | Back-gated substrate and semiconductor device, and related method of fabrication | Kangguo Cheng, Thomas N. Adam, Ali Khakifirooz, Alexander Reznicek, Raghavasimhan Sreenivasan | 2014-10-21 |
| 8860138 | Strained thin body CMOS device having vertically raised source/drain stressors with single spacer | Kangguo Cheng, Ali Khakifirooz, Pranita Kulkarni, Ghavam G. Shahidi | 2014-10-14 |
| 8860123 | Memory device having multiple dielectric gate stacks with first and second dielectric layers and related methods | Prasanna Khare, Stephane Allegret-Maret, Nicolas Loubet, Qing Liu, Hemanth Jagannathan +2 more | 2014-10-14 |
| 8859348 | Strained silicon and strained silicon germanium on insulator | Stephen W. Bedell, Kangguo Cheng, Ali Khakifirooz, Devendra K. Sadana | 2014-10-14 |
| 8853040 | Strained thin body CMOS device having vertically raised source/drain stressors with single spacer | Kangguo Cheng, Pranita Kerber, Ali Khakifirooz, Ghavam G. Shahidi | 2014-10-07 |
| 8853038 | Raised source/drain structure for enhanced strain coupling from stress liner | Kangguo Cheng, Ali Khakifirooz, Pranita Kulkarni, Ghavam G. Shahidi | 2014-10-07 |
| 8841189 | Transistor having all-around source/drain metal contact channel stressor and method to fabricate same | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2014-09-23 |
| 8835330 | Integrated circuit including DRAM and SRAM/logic | Kangguo Chen, Terence B. Hook, Ali Khakifirooz, Pranita Kulkarni | 2014-09-16 |
| 8822320 | Dense finFET SRAM | Kangguo Cheng, Ali Khakifirooz, Ghavam G. Shahidi | 2014-09-02 |
| 8815694 | Inducing channel stress in semiconductor-on-insulator devices by base substrate oxidation | Kangguo Cheng, Balasubramanian S. Haran, Ali Khakifirooz, Pranita Kerber | 2014-08-26 |
| 8815684 | Bulk finFET with super steep retrograde well | Jin Cai, Kevin K. Chan, Robert H. Dennard, Barry P. Linder, Ramachandran Muralidhar +1 more | 2014-08-26 |