Issued Patents All Time
Showing 451–475 of 767 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8809174 | MOSFET gate and source/drain contact metallization | Soon-Cheon Seo, Chih-Chao Yang | 2014-08-19 |
| 8809872 | Bulk finFET with super steep retrograde well | Jin Cai, Kevin K. Chan, Robert H. Dannard, Barry P. Linder, Ramachandran Muralidhar | 2014-08-19 |
| 8803233 | Junctionless transistor | Kangguo Cheng, Ali Khakifirooz, Pranita Kulkarni, Tak H. Ning | 2014-08-12 |
| 8796773 | Metal gate and high-K dielectric devices with PFET channel SiGe | Kangguo Cheng, Keith Kwong Hon Wong | 2014-08-05 |
| 8796093 | Doping of FinFET structures | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2014-08-05 |
| 8785273 | FinFET non-volatile memory and method of fabrication | Kangguo Cheng, Ali Khakifirooz, Pranita Kulkarni | 2014-07-22 |
| 8772143 | Field effect transistor devices with dopant free channels and back gates | Kangguo Cheng, Ali Khakifirooz, Ghavam G. Shahidi | 2014-07-08 |
| 8766377 | Field effect transistor devices with dopant free channels and back gates | Kangguo Cheng, Ali Khakifirooz, Ghavam G. Shahidi | 2014-07-01 |
| 8766363 | Method and structure for forming a localized SOI finFET | Kangguo Cheng, Veeraraghavan S. Basker, Ali Khakifirooz, Kern Rim | 2014-07-01 |
| 8766353 | Tunnel field effect transistor | Kangguo Cheng, Wilfried E. Haensch, Ali Khakifirooz, Isaac Lauer, Ghavam G. Shahidi | 2014-07-01 |
| 8759168 | MOSFET with thin semiconductor channel and embedded stressor with enhanced junction isolation and method of fabrication | Kangguo Cheng, Ali Khakifirooz, Pranita Kerber | 2014-06-24 |
| 8754488 | Borderless contacts for semiconductor devices | Kangguo Cheng, Keith Kwong Hon Wong | 2014-06-17 |
| 8754400 | Two-dimensional patterning employing self-assembled material | Timothy J. Dalton, Ho-Cheol Kim, Carl Radens | 2014-06-17 |
| 8753953 | Self aligned capacitor fabrication | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2014-06-17 |
| 8748258 | Method and structure for forming on-chip high quality capacitors with ETSOI transistors | Kangguo Cheng, Ali Khakifirooz, Ghavam G. Shahidi | 2014-06-10 |
| 8742508 | Three dimensional FET devices having different device widths | Kangguo Cheng, Ali Khakifirooz, Pranita Kulkarni | 2014-06-03 |
| 8742504 | Fully-depleted son | Kangguo Cheng, Pranita Kerber, Ghavam G. Shahidi | 2014-06-03 |
| 8742485 | Inversion mode varactor | Kangguo Cheng, Ali Khakifirooz, Pranita Kulkarni | 2014-06-03 |
| 8741701 | Fin structure formation including partial spacer removal | Kangguo Cheng, Ali Khakifirooz, Chun-Chen Yeh | 2014-06-03 |
| 8735243 | FET device with stabilized threshold modifying material | Matthew W. Copel, Vijay Narayanan, Yun-Yu Wang | 2014-05-27 |
| 8716797 | FinFET spacer formation by oriented implantation | Veeraraghavan S. Basker, Chang Kangguo, Johnathan E. Faltermeier | 2014-05-06 |
| 8710588 | Implant free extremely thin semiconductor devices | Kangguo Cheng, Dechao Guo, Pranita Kulkarni, Philip J. Oldiges, Ghavam G. Shahidi | 2014-04-29 |
| 8703550 | Dual shallow trench isolation liner for preventing electrical shorts | Shom Ponoth, Prasanna Khare, Qing Liu, Nicolas Loubet, Maud Vinet | 2014-04-22 |
| 8697522 | Bulk finFET with uniform height and bottom isolation | Kangguo Cheng | 2014-04-15 |
| 8691650 | MOSFET with recessed channel film and abrupt junctions | Kangguo Cheng, Ali Khakifirooz, Pranita Kulkarni | 2014-04-08 |