Issued Patents All Time
Showing 501–525 of 767 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8592270 | Non-relaxed embedded stressors with solid source extension regions in CMOS devices | Kangguo Cheng, Ali Khakifirooz, Pranita Kulkarni, Douglas C. La Tulipe, Jr. | 2013-11-26 |
| 8592264 | Source-drain extension formation in replacement metal gate transistor device | Takashi Ando, Huiming Bu, Ramachandra Divakaruni, Chung-Hsun Lin, Huiling Shang +1 more | 2013-11-26 |
| 8587086 | Self-aligned dual depth isolation and method of fabrication | Kangguo Cheng, Robert H. Dennard, Ali Khakifirooz, Ghavam G. Shahidi | 2013-11-19 |
| 8586439 | Inversion mode varactor | Kangguo Cheng, Ali Khakifirooz, Pranita Kulkarni | 2013-11-19 |
| 8575698 | MOSFET with thin semiconductor channel and embedded stressor with enhanced junction isolation | Kangguo Cheng, Ali Khakifirooz, Pranita Kulkarni | 2013-11-05 |
| 8574970 | Method of forming an extremely thin semiconductor insulator (ETSOI) FET having a stair-shaped raised source/drain | Kangguo Cheng, Ali Khakifirooz, Ghavam G. Shahidi | 2013-11-05 |
| 8569868 | Device having and method for forming fins with multiple widths | Kangguo Cheng, Steven J. Holmes, Xuefeng Hua, Ying Zhang | 2013-10-29 |
| 8568604 | CMOS gate structures fabricated by selective oxidation | Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, David V. Horak, Charles W. Koburger, III | 2013-10-29 |
| 8569844 | Metal gate CMOS with at least a single gate metal and dual gate dielectrics | Young-Hee Kim, Barry P. Linder, Vijay Narayanan, Vamsi K. Paruchuri | 2013-10-29 |
| 8564064 | Controlled fin-merging for fin type FET devices | Kangguo Cheng, Ali Khakifirooz, Pranita Kerber | 2013-10-22 |
| 8563385 | Field effect transistor device with raised active regions | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2013-10-22 |
| 8564040 | Inversion mode varactor | Kangguo Cheng, Ali Khakifirooz, Pranita Kulkarni | 2013-10-22 |
| 8552487 | SOI trench DRAM structure with backside strap | Kangguo Cheng, Ali Khakifirooz, Pranita Kulkarni, Ghavam G. Shahidi | 2013-10-08 |
| 8551848 | Field effect transistor with asymmetric abrupt junction implant | Pranita Kerber, Kangguo Cheng, Ali Khakifirooz | 2013-10-08 |
| 8551872 | Low series resistance transistor structure on silicon on insulator layer | Kangguo Chen, Balasubramanian S. Haran, Amlan Majumdar, Sanjay C. Mehta | 2013-10-08 |
| 8551874 | MOSFET gate and source/drain contact metallization | Soon-Cheon Seo, Chih-Chao Yang | 2013-10-08 |
| 8546228 | Strained thin body CMOS device having vertically raised source/drain stressors with single spacer | Kangguo Cheng, Ali Khakifirooz, Pranita Kulkarni, Ghavam G. Shahidi | 2013-10-01 |
| 8546203 | Semiconductor structure having NFET extension last implants | Kangguo Cheng, Bala Haran, Pranita Kulkarni, Nicolas Loubet, Amlan Majumdar +1 more | 2013-10-01 |
| 8535999 | Stress memorization process improvement for improved technology performance | Lahir Shaik Adam, Sanjay C. Mehta, Zhengmao Zhu | 2013-09-17 |
| 8536032 | Formation of embedded stressor through ion implantation | Kangguo Cheng, Ali Khakifirooz, Pranita Kulkarni, Ghavam G. Shahidi | 2013-09-17 |
| 8530971 | Borderless contacts for semiconductor devices | Kangguo Cheng, Keith Kwong Hon Wong | 2013-09-10 |
| 8530974 | CMOS structure having multiple threshold voltage devices | Kangguo Cheng, Ali Khakifirooz, Pranita Kulkarni | 2013-09-10 |
| 8525292 | SOI device with DTI and STI | Kangguo Cheng, Ali Khakifirooz, Pranita Kulkarni | 2013-09-03 |
| 8525235 | Multiplying pattern density by single sidewall imaging transfer | Kangguo Cheng, Ying Zhang | 2013-09-03 |
| 8513723 | Method and structure for forming high performance MOS capacitor along with fully depleted semiconductor on insulator devices on the same chip | Roger A. Booth, Jr., Kangguo Cheng, Ghavam G. Shahidi | 2013-08-20 |