Issued Patents 2002
Showing 1–25 of 46 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6501177 | Atomic layer barrier layer for integrated circuit interconnects | Sergey Lopatin, Minh Quoc Tran | 2002-12-31 |
| 6495460 | Dual layer silicide formation using a titanium barrier to reduce surface roughness at silicide/junction interface | Jacques Bertrand, George Jonathan Kluth, Christy Mei-Chu Woo | 2002-12-17 |
| 6492266 | Method of forming reliable capped copper interconnects | Shekhar Pramanick, Takeshi Nogami | 2002-12-10 |
| 6489253 | Method of forming a void-free interlayer dielectric (ILD0) for 0.18-&mgr;m flash memory technology and semiconductor device thereby formed | Robert A. Huertas, Lu You, King Wai Kelwin Ko, Pei-Yuan Gao | 2002-12-03 |
| 6483154 | Nitrogen oxide plasma treatment for reduced nickel silicide bridging | Christy Mei-Chu Woo | 2002-11-19 |
| 6483153 | Method to improve LDD corner control with an in-situ film for local interconnect processing | Angela T. Hui, Paul R. Besser | 2002-11-19 |
| 6482755 | HDP deposition hillock suppression method in integrated circuits | Dawn Hopper, Robert A. Huertas | 2002-11-19 |
| 6479348 | Method of making memory wordline hard mask extension | Tazrien Kamal, Mark T. Ramsbey, Jeffrey A. Shields, Jean Y. Yang, Emmanuil Lingunis +2 more | 2002-11-12 |
| 6479898 | Dielectric treatment in integrated circuit interconnects | Dawn Hopper, Joffre F. Bernard | 2002-11-12 |
| 6475847 | Method for forming a semiconductor device with self-aligned contacts using a liner oxide layer | Yu Sun, Fei Wang, Mark T. Ramsbey, Chi Chang, Angela T. Hui +1 more | 2002-11-05 |
| 6472755 | Semiconductor device comprising copper interconnects with reduced in-line copper diffusion | Takeshi Nogami | 2002-10-29 |
| 6468900 | Dual layer nickel deposition using a cobalt barrier to reduce surface roughness at silicide/junction interface | Jacques Bertrand, George Jonathan Kluth, Christy Mei-Chu Woo | 2002-10-22 |
| 6469385 | Integrated circuit with dielectric diffusion barrier layer formed between interconnects and interlayer dielectric layers | Steven C. Avanzino, Pin-Chin Connie Wang | 2002-10-22 |
| 6465349 | Nitrogen-plasma treatment for reduced nickel silicide bridging | Christy Mei-Chu Woo, Paul R. Besser, Robert A. Huertas | 2002-10-15 |
| 6462417 | Coherent alloy diffusion barrier for integrated circuit interconnects | Pin-Chin Connie Wang, Amit P. Marathe, Suzette K. Pangrle | 2002-10-08 |
| 6459155 | Damascene processing employing low Si-SiON etch stop layer/arc | Ramkumar Subramanian, Dawn Hopper | 2002-10-01 |
| 6455422 | Densification process hillock suppression method in integrated circuits | Christy Mei-Chu Woo | 2002-09-24 |
| 6451647 | Integrated plasma etch of gate and gate dielectric and low power plasma post gate etch removal of high-K residual | Chih-Yuh Yang | 2002-09-17 |
| 6445070 | Coherent carbide diffusion barrier for integrated circuit interconnects | Pin-Chin Connie Wang, Amit P. Marathe, Suzette K. Prangrle | 2002-09-03 |
| 6444593 | Surface treatment of low-K SiOF to prevent metal interaction | Richard J. Huang, Guarionex Morales | 2002-09-03 |
| 6441490 | Low dielectric constant stop layer for integrated circuit interconnects | Christy Mei-Chu Woo | 2002-08-27 |
| 6436808 | NH3/N2-plasma treatment to prevent organic ILD degradation | Dawn Hopper, Jeremy I. Martin | 2002-08-20 |
| 6432822 | Method of improving electromigration resistance of capped Cu | Steven C. Avanzino, Amit P. Marathe | 2002-08-13 |
| 6432805 | Co-deposition of nitrogen and metal for metal silicide formation | Eric N. Paton, Paul R. Besser | 2002-08-13 |
| 6432817 | Tungsten silicide barrier for nickel silicidation of a gate electrode | Jacques Bertrand, Christy Mei-Chu Woo, George Jonathan Kluth | 2002-08-13 |