Issued Patents 2002
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6495460 | Dual layer silicide formation using a titanium barrier to reduce surface roughness at silicide/junction interface | Jacques Bertrand, Minh Van Ngo, Christy Mei-Chu Woo | 2002-12-17 |
| 6486062 | Selective deposition of amorphous silicon for formation of nickel silicide with smooth interface on N-doped substrate | Matthew S. Buynoski | 2002-11-26 |
| 6468900 | Dual layer nickel deposition using a cobalt barrier to reduce surface roughness at silicide/junction interface | Jacques Bertrand, Minh Van Ngo, Christy Mei-Chu Woo | 2002-10-22 |
| 6451693 | Double silicide formation in polysicon gate without silicide in source/drain extensions | Christy Mei-Chu Woo, Qi Xiang | 2002-09-17 |
| 6432817 | Tungsten silicide barrier for nickel silicidation of a gate electrode | Jacques Bertrand, Christy Mei-Chu Woo, Minh Van Ngo | 2002-08-13 |
| 6410388 | Process for optimizing pocket implant profile by RTA implant annealing for a non-volatile semiconductor device | Stephen Keetai Park, Arvind Halliyal, David K. Foote | 2002-06-25 |
| 6391730 | Process for fabricating shallow pocket regions in a non-volatile semiconductor device | Arvind Halliyal | 2002-05-21 |
| 6387767 | Nitrogen-rich silicon nitride sidewall spacer deposition | Paul R. Besser, Minh Van Ngo, Christy Mei-Chu Woo | 2002-05-14 |
| 6380057 | Enhancement of nickel silicide formation by use of nickel pre-amorphizing implant | Matthew S. Buynoski, Paul R. Besser, Paul L. King | 2002-04-30 |
| 6376341 | Optimization of thermal cycle for the formation of pocket implants | Arvind Halliyal | 2002-04-23 |
| 6372673 | Silicon-starved nitride spacer deposition | Paul R. Besser, Minh Van Ngo, Christy Mei-Chu Woo | 2002-04-16 |
| 6362095 | Nickel silicide stripping after nickel silicide formation | Christy Mei-Chu Woo, Jacques Bertrand | 2002-03-26 |