Issued Patents 2002
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6475874 | Damascene NiSi metal gate high-k transistor | Qi Xiang, Paul R. Besser, Matthew S. Buynoski, John Foster, Eric N. Paton | 2002-11-05 |
| 6469387 | Semiconductor device formed by calcium doping a copper surface using a chemical solution | Sergey Lopatin, Joffre F. Bernard | 2002-10-22 |
| 6465309 | Silicide gate transistors | Qi Xiang, Paul R. Besser, Matthew S. Buynoski, John Foster, Eric N. Paton | 2002-10-15 |
| 6465334 | Enhanced electroless deposition of dielectric precursor materials for use in in-laid gate MOS transistors | Matthew S. Buynoski, Paul R. Besser, Eric N. Paton, Qi Xiang | 2002-10-15 |
| 6458679 | Method of making silicide stop layer in a damascene semiconductor structure | Eric N. Paton, Paul R. Besser, Matthew S. Buynoski, Qi Xiang, John Foster | 2002-10-01 |
| 6444580 | Method of reducing carbon, sulphur, and oxygen impurities in a calcium-doped copper surface and semiconductor device thereby formed | Sergey Lopatin, Joffre F. Bernard | 2002-09-03 |
| 6380057 | Enhancement of nickel silicide formation by use of nickel pre-amorphizing implant | Matthew S. Buynoski, George Jonathan Kluth, Paul R. Besser | 2002-04-30 |
| 6372644 | Hydrogen passivated silicon nitride spacers for reduced nickel silicide bridging | John Foster | 2002-04-16 |
| 6368950 | Silicide gate transistors | Qi Xiang, Paul R. Besser, Matthew S. Buynoski, John Foster, Eric N. Paton | 2002-04-09 |
| 6342414 | Damascene NiSi metal gate high-k transistor | Qi Xiang, Paul R. Besser, Matthew S. Buynoski, John Foster, Eric N. Paton | 2002-01-29 |