Issued Patents 2002
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6492675 | Flash memory array with dual function control lines and asymmetrical source and drain junctions | Michael A. Van Buskirk | 2002-12-10 |
| 6475847 | Method for forming a semiconductor device with self-aligned contacts using a liner oxide layer | Minh Van Ngo, Yu Sun, Fei Wang, Mark T. Ramsbey, Angela T. Hui +1 more | 2002-11-05 |
| 6469939 | Flash memory device with increase of efficiency during an APDE (automatic program disturb after erase) process | Zhigang Wang, Richard Fastow, Sheung-Hee Park, Sameer Haddad | 2002-10-22 |
| 6455373 | Semiconductor device having gate edges protected from charge gain/loss | Tuan Pham, Mark T. Ramsbey, Sameer Haddad, Angela T. Hui, Yu Sun | 2002-09-24 |
| 6444530 | Process for fabricating an integrated circuit with a self-aligned contact | Hung-Sheng Chen, Unsoon Kim, Yu Sun, Mark T. Ramsbey, Mark Randolph +4 more | 2002-09-03 |
| 6444539 | Method for producing a shallow trench isolation filled with thermal oxide | Yu Sun, Angela T. Hui, Yue-Song He, Tatsuya Kajita, Mark S. Chang +1 more | 2002-09-03 |
| 6429108 | Non-volatile memory device with encapsulated tungsten gate and method of making same | Richard J. Huang, Keizaburo Yoshie, Yu Sun | 2002-08-06 |
| 6420752 | Semiconductor device with self-aligned contacts using a liner oxide layer | Minh Van Ngo, Yu Sun, Fei Wang, Mark T. Ramsbey, Angela T. Hui +1 more | 2002-07-16 |
| 6399984 | Species implantation for minimizing interface defect density in flash memory devices | Yider Wu, Mark T. Ramsbey, Yu Sun, Tuan Pham, Jean Y. Yang | 2002-06-04 |
| 6381179 | Using a negative gate erase to increase the cycling endurance of a non-volatile memory cell with an oxide-nitride-oxide (ONO) structure | Narbeh Derhacobian, Michael Van Buskirk, Daniel Sobek | 2002-04-30 |
| 6356482 | Using negative gate erase voltage to simultaneously erase two bits from a non-volatile memory cell with an oxide-nitride-oxide (ONO) gate structure | Narbeh Derhacobian, Michael Van Buskirk, Daniel Sobek | 2002-03-12 |
| 6346467 | Method of making tungsten gate MOS transistor and memory cell by encapsulating | Richard J. Huang, Keizaburo Yoshie, Yu Sun | 2002-02-12 |