Issued Patents 2002
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6501681 | Using a low drain bias during erase verify to ensure complete removal of residual charge in the nitride in sonos non-volatile memories | Michael A. Van Buskirk | 2002-12-31 |
| 6493261 | Single bit array edges | Darlene Hamilton, Kulachet Tanpairoj, Ravi Sunkavalli, Michael A. Van Buskirk | 2002-12-10 |
| 6468865 | Method of simultaneous formation of bitline isolation and periphery oxide | Jean Y. Yang, Mark T. Ramsbey, Hidehiko Shiraiwa, Michael A. Van Buskirk, David Michael Rogers +3 more | 2002-10-22 |
| 6465303 | Method of manufacturing spacer etch mask for silicon-oxide-nitride-oxide-silicon (SONOS) type nonvolatile memory | Mark T. Ramsbey, Janet Wang, Angela T. Hui, Tuan Pham, Ravi Sunkavalli +1 more | 2002-10-15 |
| 6465306 | Simultaneous formation of charge storage and bitline to wordline isolation | Mark T. Ramsbey, Jean Y. Yang, Hidehiko Shiraiwa, Michael A. Van Buskirk, David Michael Rogers +3 more | 2002-10-15 |
| 6456536 | Method of programming a non-volatile memory cell using a substrate bias | Daniel Sobek, Timothy Thurgate, Janet Wang | 2002-09-24 |
| 6456533 | Higher program VT and faster programming rates based on improved erase methods | Darlene Hamilton, Janet Wang, Kulachet Tanpairoj | 2002-09-24 |
| 6442074 | Tailored erase method using higher program VT and higher negative gate erase | Darlene Hamilton, Kulachet Tanpairoj, Ravi Sunkavalli | 2002-08-27 |
| 6381179 | Using a negative gate erase to increase the cycling endurance of a non-volatile memory cell with an oxide-nitride-oxide (ONO) structure | Michael Van Buskirk, Chi Chang, Daniel Sobek | 2002-04-30 |
| 6369433 | High voltage transistor with low body effect and low leakage | Pau-Ling Chen, Hao Fang | 2002-04-09 |
| 6356482 | Using negative gate erase voltage to simultaneously erase two bits from a non-volatile memory cell with an oxide-nitride-oxide (ONO) gate structure | Michael Van Buskirk, Chi Chang, Daniel Sobek | 2002-03-12 |
| 6351017 | High voltage transistor with modified field implant mask | Hao Fang | 2002-02-26 |