Issued Patents 2002
Showing 1–11 of 11 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6468865 | Method of simultaneous formation of bitline isolation and periphery oxide | Jean Y. Yang, Mark T. Ramsbey, Hidehiko Shiraiwa, Michael A. Van Buskirk, David Michael Rogers +3 more | 2002-10-22 |
| 6465306 | Simultaneous formation of charge storage and bitline to wordline isolation | Mark T. Ramsbey, Jean Y. Yang, Hidehiko Shiraiwa, Michael A. Van Buskirk, David Michael Rogers +3 more | 2002-10-15 |
| 6445030 | Flash memory erase speed by fluorine implant or fluorination | Jean Y. Yang, Hidehiko Shiraiwa, Che-Hoo Ng | 2002-09-03 |
| 6440797 | Nitride barrier layer for protection of ONO structure from top oxide loss in a fabrication of SONOS flash memory | Jean Y. Yang, Mark T. Ramsbey, Emmanuel H. Lingunis, Yu Sun | 2002-08-27 |
| 6436768 | Source drain implant during ONO formation for improved isolation of SONOS devices | Jean Y. Yang, Mark T. Ramsbey, Emmanuil Lingunis, Tazrien Kamal, Yi He +2 more | 2002-08-20 |
| 6417082 | Semiconductor structure | Jean Y. Yang, Hidehiko Shiraiwa, Mark Ramsbey | 2002-07-09 |
| 6403420 | Nitrogen implant after bit-line formation for ONO flash memory devices | Jean Y. Yang, Mark T. Ramsbey, Yu Sun | 2002-06-11 |
| 6399984 | Species implantation for minimizing interface defect density in flash memory devices | Mark T. Ramsbey, Chi Chang, Yu Sun, Tuan Pham, Jean Y. Yang | 2002-06-04 |
| 6395654 | Method of forming ONO flash memory devices using rapid thermal oxidation | Jean Y. Yang, Hidehiko Shiraiwa, Mark Ramsbey | 2002-05-28 |
| 6362051 | Method of forming ONO flash memory devices using low energy nitrogen implantation | Jean Y. Yang, Hidehiko Shiraiwa, Mark Ramsbey | 2002-03-26 |
| 6344994 | Data retention characteristics as a result of high temperature bake | Darlene Hamilton, Michael Han | 2002-02-05 |