Issued Patents 2002
Showing 26–46 of 46 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6429128 | Method of forming nitride capped Cu lines with reduced electromigration along the Cu/nitride interface | Paul R. Besser, Larry Zhao | 2002-08-06 |
| 6420752 | Semiconductor device with self-aligned contacts using a liner oxide layer | Yu Sun, Fei Wang, Mark T. Ramsbey, Chi Chang, Angela T. Hui +1 more | 2002-07-16 |
| 6417100 | Annealing ambient in integrated circuit interconnects | Steven C. Avanzino, Pin-Chin Connie Wang | 2002-07-09 |
| 6410461 | Method of depositing sion with reduced defects | Pei-Yuan Gao | 2002-06-25 |
| 6403474 | Controlled anneal conductors for integrated circuit interconnects | Steven C. Avanzino, Pin-Chin Connie Wang | 2002-06-11 |
| 6399480 | Methods and arrangements for insulating local interconnects for improved alignment tolerance and size reduction | William G. En, Darin A. Chan, David K. Foote, Fei Wang | 2002-06-04 |
| 6395644 | Process for fabricating a semiconductor device using a silicon-rich silicon nitride ARC | Dawn Hopper, David K. Foote | 2002-05-28 |
| 6388330 | Low dielectric constant etch stop layers in integrated circuit interconnects | Dawn Hopper, Robert A. Huertas, Terri Jo Kitson | 2002-05-14 |
| 6387767 | Nitrogen-rich silicon nitride sidewall spacer deposition | Paul R. Besser, Christy Mei-Chu Woo, George Jonathan Kluth | 2002-05-14 |
| 6383925 | Method of improving adhesion of capping layers to cooper interconnects | Lu You, Robert A. Huertas, Ercan Adem | 2002-05-07 |
| 6383950 | Insulating and capping structure with preservation of the low dielectric constant of the insulating layer | Suzette K. Pangrle, Susan Tovar | 2002-05-07 |
| 6383880 | NH3/N2-plasma treatment for reduced nickel silicide bridging | Christy Mei-Chu Woo, Robert A. Huertas | 2002-05-07 |
| 6380067 | Method for creating partially UV transparent anti-reflective coating for semiconductors | Ramkumar Subramanian, Suzette K. Pangrle, Kashmir Sahota, Christopher F. Lyons | 2002-04-30 |
| 6380588 | Semiconductor device having uniform spacers | William G. En, Chih-Yuk Yang, David K. Foote, Scott A. Bell, Olov Karlsson +1 more | 2002-04-30 |
| 6376389 | Method for eliminating anti-reflective coating in semiconductors | Ramkumar Subramanian, Kashmir Sahota, YongZhong Hu, Hiroyuki Kinoshita, Fei Wang +1 more | 2002-04-23 |
| 6372673 | Silicon-starved nitride spacer deposition | Paul R. Besser, Christy Mei-Chu Woo, George Jonathan Kluth | 2002-04-16 |
| 6368948 | Method of forming capped copper interconnects with reduced hillocks | Hartmut Ruelke, Joerg Hohage, Lothar Mergili | 2002-04-09 |
| 6348406 | Method for using a low dielectric constant layer as a semiconductor anti-reflective coating | Ramkumar Subramanian, Kashmir Sahota, YongZhong Hu, Hiroyuki Kinoshita, Fei Wang +1 more | 2002-02-19 |
| 6348732 | Amorphized barrier layer for integrated circuit interconnects | Sergey Lopatin, Minh Quoc Tran | 2002-02-19 |
| 6348410 | Low temperature hillock suppression method in integrated circuit interconnects | Dawn Hopper, Robert A. Huertas | 2002-02-19 |
| 6335283 | Method of reducing in-line copper diffusion | Takeshi Nogami | 2002-01-01 |