Issued Patents All Time
Showing 76–100 of 110 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6238803 | Titanium nitride barrier layers | Jianming Fu, Fusen Chen | 2001-05-29 |
| 6238528 | Plasma density modulator for improved plasma density uniformity and thickness uniformity in an ionized metal plasma source | Fusen Chen, Jianming Fu | 2001-05-29 |
| 6235169 | Modulated power for ionized metal plasma deposition | Praburam Gopalraja, John C. Forster, Bradley O. Stimson | 2001-05-22 |
| 6232665 | Silicon-doped titanium wetting layer for aluminum plug | Gongda Yao, Peijun Ding, Hoa Kieu | 2001-05-15 |
| 6231725 | Apparatus for sputtering material onto a workpiece with the aid of a plasma | Jaim Nulman | 2001-05-15 |
| D440582 | Sputtering chamber coil | Praburam Gopalraja, Michael Rosenstein, John C. Forster, Peijun Ding | 2001-04-17 |
| 6217721 | Filling narrow apertures and forming interconnects with a metal utilizing a crystallographically oriented liner layer | John C. Forster, Tse-Yong Yao, Jaim Nulman, Fusen Chen | 2001-04-17 |
| 6217718 | Method and apparatus for reducing plasma nonuniformity across the surface of a substrate in apparatus for producing an ionized metal plasma | Ralf Holmann | 2001-04-17 |
| 6190513 | Darkspace shield for improved RF transmission in inductively coupled plasma sources for sputter deposition | John C. Forster, Bradley O. Stimson | 2001-02-20 |
| 6146508 | Sputtering method and apparatus with small diameter RF coil | Praburam Gopalraja, Ralf Hofmann | 2000-11-14 |
| 6136095 | Apparatus for filling apertures in a film layer on a semiconductor substrate | John C. Forster, Tse-Yong Yao | 2000-10-24 |
| 6110821 | Method for forming titanium silicide in situ | Gene Y. Kohara, Fusen Chen, Hyman J. Levinstein, Peijun Ding, Gongda Yao +1 more | 2000-08-29 |
| 6080285 | Multiple step ionized metal plasma deposition process for conformal step coverage | Joanna Liu | 2000-06-27 |
| 6077402 | Central coil design for ionized metal plasma deposition | Liubo Hong, Hougong Wang, Gongda Yao | 2000-06-20 |
| 6051114 | Use of pulsed-DC wafer bias for filling vias/trenches with metal in HDP physical vapor deposition | Tse-Yong Yao, Kenny King-Tai Ngan, Xing Chen, John Arthur Urbahn, Lawrence P. Bourget | 2000-04-18 |
| 6045666 | Aluminum hole filling method using ionized metal adhesion layer | Peter Satitpunwaycha, Gongda Yao, Kenny King-Tai Ngan | 2000-04-04 |
| 6033541 | Deposition process for coating or filling re-entry shaped contact holes | Hoa Kieu | 2000-03-07 |
| 5976334 | Reliable sustained self-sputtering | Jianming Fu | 1999-11-02 |
| 5962923 | Semiconductor device having a low thermal budget metal filling and planarization of contacts, vias and trenches | John C. Forster, Tse-Yong Yao | 1999-10-05 |
| 5911113 | Silicon-doped titanium wetting layer for aluminum plug | Gongda Yao, Peijun Ding, Hoa Kieu | 1999-06-08 |
| 5902461 | Apparatus and method for enhancing uniformity of a metal film formed on a substrate with the aid of an inductively coupled plasma | Ralf Hofmann | 1999-05-11 |
| 5895266 | Titanium nitride barrier layers | Jianming Fu, Fusen Chen | 1999-04-20 |
| 5876574 | Magnet design for a sputtering chamber | Ralf Hofmann | 1999-03-02 |
| 5868847 | Clamp ring for shielding a substrate during film layer deposition | Aihua Chen, Howard Grunes, Avi Tepman, Igor Kogan | 1999-02-09 |
| 5851364 | Method for forming aluminum contacts | Jianming Fu | 1998-12-22 |