Issued Patents All Time
Showing 1–14 of 14 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6790776 | Barrier layer for electroplating processes | Peijun Ding, Tony P. Chiang, Barry Chin | 2004-09-14 |
| 6607640 | Temperature control of a substrate | Arvind Sundarrajan, Darryl Angelo, Peijun Ding | 2003-08-19 |
| 6436832 | Method to reduce polish initiation time in a polish process | Yutao Ma, Juilung Li, Fred C. Redeker, Rajeev Bajaj | 2002-08-20 |
| 6436302 | Post CU CMP polishing for reduced defects | Juy-Lung Li, Fred C. Redeker, Rajeev Bajaj, Yutao Ma | 2002-08-20 |
| 6328871 | Barrier layer for electroplating processes | Peijun Ding, Tony P. Chiang, Barry Chin | 2001-12-11 |
| 6313027 | Method for low thermal budget metal filling and planarization of contacts vias and trenches | Zheng Xu, John C. Forster | 2001-11-06 |
| 6277198 | Use of tapered shadow clamp ring to provide improved physical vapor deposition system | Allen Russell Thompson, Peijun Ding, Richard Hong | 2001-08-21 |
| 6217721 | Filling narrow apertures and forming interconnects with a metal utilizing a crystallographically oriented liner layer | Zheng Xu, John C. Forster, Jaim Nulman, Fusen Chen | 2001-04-17 |
| 6140235 | High pressure copper fill at low temperature | Barry Chin | 2000-10-31 |
| 6136095 | Apparatus for filling apertures in a film layer on a semiconductor substrate | Zheng Xu, John C. Forster | 2000-10-24 |
| 6051114 | Use of pulsed-DC wafer bias for filling vias/trenches with metal in HDP physical vapor deposition | Zheng Xu, Kenny King-Tai Ngan, Xing Chen, John Arthur Urbahn, Lawrence P. Bourget | 2000-04-18 |
| 5962923 | Semiconductor device having a low thermal budget metal filling and planarization of contacts, vias and trenches | Zheng Xu, John C. Forster | 1999-10-05 |
| 5847461 | Integrated circuit structure having contact openings and vias filled by self-extrusion of overlying metal layer | Zheng Xu, Hoa Kieu, Julio Aranovich | 1998-12-08 |
| 5668055 | Method of filling of contact openings and vias by self-extrusion of overlying compressively stressed matal layer | Zheng Xu, Hoa Kieu, Julio Aranovich | 1997-09-16 |