Issued Patents All Time
Showing 76–100 of 337 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8264046 | Synergy effect of alloying materials in interconnect structures | Hui-Lin Chang, Yung-Cheng Lu | 2012-09-11 |
| 8255843 | Method of manufacturing strained-silicon semiconductor device | Yun-Hsiu Chen, Pang-Yen Tsai | 2012-08-28 |
| 8242016 | Approach for reducing copper line resistivity | Hsien-Ming Lee, Minghsing Tsai | 2012-08-14 |
| 8053359 | Semiconductor device having a second level of metallization formed over a first level with minimal damage to the first level and method | Tien-I Bao | 2011-11-08 |
| 8053356 | Interconnect structure for semiconductor devices | Hui-Lin Chang, Hung Chun Tsai, Yung-Cheng Lu | 2011-11-08 |
| 7977791 | Selective formation of boron-containing metal cap pre-layer | Hui-Lin Chang, Yung-Cheng Lu | 2011-07-12 |
| 7968506 | Wet cleaning stripping of etch residue after trench and via opening formation in dual damascene process | Chun-Li Chou, Jyu-Horng Shieh, Chih-Yuan Ting | 2011-06-28 |
| 7863196 | Self-aligned dielectric cap | Hulin Chang, Yung-Cheng Lu | 2011-01-04 |
| 7834458 | Interconnect structure for semiconductor devices | Hui-Lin Chang, Hung Chun Tsai, Yung-Cheng Lu | 2010-11-16 |
| 7754571 | Method for forming a strained channel in a semiconductor device | Ken Liao, Kuo-Hua Pan, Yun-Hsiu Chen, Yi-Ching Lin | 2010-07-13 |
| 7732326 | Semiconductor device having a second level of metallization formed over a first level with minimal damage to the first level and method | Tien-I Bao | 2010-06-08 |
| 7670947 | Metal interconnect structure and process for forming same | Tsang-Jiuh Wu, Ming-Chung Liang, Hsin-Yi Tsai | 2010-03-02 |
| 7655556 | Interconnect structures for semiconductor devices | Hui-Lin Chang, Hung Chun Tsai, Yung-Cheng Lu | 2010-02-02 |
| 7642189 | Synergy effect of alloying materials in interconnect structures | Hui-Lin Chang, Yung-Cheng Lu | 2010-01-05 |
| 7629690 | Dual damascene process without an etch stop layer | Tsang-Jiuh Wu | 2009-12-08 |
| 7511349 | Contact or via hole structure with enlarged bottom critical dimension | Ming-Huan Tsai, Fang Chen, Chao-Cheng Chen | 2009-03-31 |
| 7462561 | Contact structure formed using supercritical cleaning fluid and ALCVD | David Lu, Horng-Huei Tseng | 2008-12-09 |
| 7456093 | Method for improving a semiconductor device delamination resistance | Pi-Tsung Chen, Keng-Chu Lin, Hui-Lin Chang, Lih-Ping Li, Tien-I Bao +1 more | 2008-11-25 |
| 7429769 | Recessed channel field effect transistor (FET) device | Carlos H. Diaz, Yi-Ming Sheu, Hun-Jan Tao, Fu-Liang Yang | 2008-09-30 |
| 7414315 | Damascene structure with high moisture-resistant oxide and method for making the same | Tsang-Jiuh Wu | 2008-08-19 |
| 7407601 | Polymeric particle slurry system and method to reduce feature sidewall erosion | Shen-Nan Lee, Ying-Ho Chen, Tzu-Jen Chou | 2008-08-05 |
| 7378308 | CMOS devices with improved gap-filling | Ju-Wang Hsu, Chih-Hsin Ko, Jyu-Horng Shieh, Baw-Ching Perng | 2008-05-27 |
| 7375040 | Etch stop layer | Simon Su-Horng Lin, Weng Chang, Mong-Song Liang | 2008-05-20 |
| 7371629 | N/PMOS saturation current, HCE, and Vt stability by contact etch stop film modifications | Chu-Yun Fu, Chi-Hsun Hsieh, Yi-Ming Sheu | 2008-05-13 |
| 7320945 | Gradient low k material | Lih-Ping Li | 2008-01-22 |