Issued Patents All Time
Showing 76–100 of 169 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10381364 | Three-dimensional memory device including vertically offset drain select level layers and method of making thereof | Fei Zhou, Rahul Sharangpani, Raghuveer S. Makala, Senaka Kanakamedala | 2019-08-13 |
| 10381376 | Three-dimensional flat NAND memory device including concave word lines and method of making the same | Masatoshi Nishikawa, Xiaolong Hu | 2019-08-13 |
| 10373969 | Three-dimensional memory device including partially surrounding select gates and fringe field assisted programming thereof | Peng Zhang, Johann Alsmeier, Yingda Dong | 2019-08-06 |
| 10355007 | Three-dimensional memory structure having a back gate electrode | Xiying Costa, Dana Lee, Johann Alsmeier, Yingda Dong, Akira Matsudaira | 2019-07-16 |
| 10355015 | Three-dimensional NAND memory device with common bit line for multiple NAND strings in each memory block | James Kai, Johann Alsmeier | 2019-07-16 |
| 10290643 | Three-dimensional memory device containing floating gate select transistor | James Kai, Johann Alsmeier, Peng Zhang | 2019-05-14 |
| 10262599 | Display backlight brightness adjustment | John Lang, Yunhui Chu, Zhiming Zhuang | 2019-04-16 |
| 10256248 | Through-memory-level via structures between staircase regions in a three-dimensional memory device and method of making thereof | Zhenyu Lu, Jixin Yu, Johann Alsmeier, Fumiaki Toyama, Yuki Mizutani +5 more | 2019-04-09 |
| 10236300 | On-pitch drain select level isolation structure for three-dimensional memory device and method of making the same | Masanori Tsutsumi, Shinsuke Yada, Sayako Nagamine, Johann Alsmeier | 2019-03-19 |
| 10224104 | Three dimensional NAND memory device with common bit line for multiple NAND strings in each memory block | Murshed Chowdhury, Jin Liu, Andrew Lin, Raghuveer S. Makala, Johann Alsmeier | 2019-03-05 |
| 10224407 | High voltage field effect transistor with laterally extended gate dielectric and method of making thereof | Murshed Chowdhury, Andrew Lin, James Kai, Johann Alsmeier | 2019-03-05 |
| 10217746 | Three-dimensional memory device having L-shaped word lines and a support structure and methods of making the same | Tae Kyung Kim, Raghuveer S. Makala, Hiroyuki Kinoshita, Daxin Mao, Jixin Yu +5 more | 2019-02-26 |
| 10192878 | Three-dimensional memory device with self-aligned multi-level drain select gate electrodes | Masanori Tsutsumi, Shinsuke Yada | 2019-01-29 |
| 10115732 | Three dimensional memory device containing discrete silicon nitride charge storage regions | Jixin Yu, Zhenyu Lu, Daxin Mao, Andrey Serov, Chun Ge +1 more | 2018-10-30 |
| 10115730 | Three-dimensional memory device containing structurally reinforced pedestal channel portions and method of making thereof | Ashish Baraskar, Naohiro Hosoda, Raghuveer S. Makala, Hiroyuki Tanaka, Ryo Nakamura +1 more | 2018-10-30 |
| 10103169 | Method of making a three-dimensional memory device using a multi-step hot phosphoric acid wet etch process | Chun Ge, Fei Zhou, Raghuveer S. Makala, Takashi Orimoto | 2018-10-16 |
| 10083982 | Three-dimensional memory device having select gate electrode that is thicker than word lines and method of making thereof | Keisuke SHIGEMURA, Junichi Ariyoshi, Masanori Tsutsumi, Michiaki Sano, Raghuveer S. Makala | 2018-09-25 |
| 10074666 | Three-dimensional memory device with enhanced mechanical stability semiconductor pedestal and method of making thereof | Chun Ge, Johann Alsmeier, Fabo Yu, Jixin Yu | 2018-09-11 |
| 10050054 | Three-dimensional memory device having drain select level isolation structure and method of making thereof | Johann Alsmeier, Raghuveer S. Makala, Senaka Kanakamedala, Rahul Sharangpani, James Kai | 2018-08-14 |
| 10020314 | Forming memory cell film in stack opening | Ashish Baraskar, Liang Pang, Ching-Huang Lu, Yingda Dong | 2018-07-10 |
| 10008570 | Bulb-shaped memory stack structures for direct source contact in three-dimensional memory device | Jixin Yu, Kento KITAMURA, Tong Zhang, Chun Ge, Satoshi Shimizu +6 more | 2018-06-26 |
| 9972641 | Three-dimensional memory device having a multilevel drain select gate electrode and method of making thereof | Jin Liu, Raghuveer S. Makala, Murshed Chowdhury, Johann Alsmeier | 2018-05-15 |
| 9960180 | Three-dimensional memory device with partially discrete charge storage regions and method of making thereof | Fei Zhou, Raghuveer S. Makala, Rahul Sharangpani, Keerti Shukla, Peng Zhang | 2018-05-01 |
| 9917100 | Three-dimensional NAND device containing support pedestal structures for a buried source line and method of making the same | Tong Zhang, Johann Alsmeier, James Kai, Jin Liu | 2018-03-13 |
| 9887207 | Three dimensional NAND device having dummy memory holes and method of making thereof | Raghuveer S. Makala, Johann Alsmeier, Yao-Sheng Lee, Tiger Xu | 2018-02-06 |