Issued Patents All Time
Showing 126–150 of 169 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9570463 | Multilevel memory stack structure with joint electrode having a collar portion and methods for manufacturing the same | Raghuveer S. Makala, Jin Liu, Murshed Chowdhury, Yao-Sheng Lee, Johann Alsmeier | 2017-02-14 |
| 9553146 | Three dimensional NAND device having a wavy charge storage layer | Matthias Baenninger, Akira Matsudaira, Yao-Sheng Lee, Johann Alsmeier | 2017-01-24 |
| 9538624 | Display backlight modulation | Akihiro Takagi, Achintya Bhowmik, Anil V. Nanduri | 2017-01-03 |
| 9520105 | Power savings for display panels | Jun Shi, Akihiro Takagi, Robert Brennan, Seh Kwa | 2016-12-13 |
| 9484269 | Structure and method to control bottom corner threshold in an SOI device | Joseph Ervin, Jeffrey B. Johnson, Kevin McStay, Paul C. Parries, Chengwen Pei +1 more | 2016-11-01 |
| 9478558 | Semiconductor structure with concave blocking dielectric sidewall and method of making thereof by isotropically etching the blocking dielectric layer | Sateesh Koka, Senaka Kanakamedala, Raghuveer S. Makala, Rahul Sharangpani, Yao-Sheng Lee +1 more | 2016-10-25 |
| 9455263 | Three dimensional NAND device with channel contacting conductive source line and method of making thereof | Go Shoji, Johann Alsmeier, Jayavel Pachamuthu, Yingda Dong, Jiahui Yuan | 2016-09-27 |
| 9455267 | Three dimensional NAND device having nonlinear control gate electrodes and method of making thereof | Johann Alsmeier | 2016-09-27 |
| 9418625 | Resolution loss mitigation for 3D displays | — | 2016-08-16 |
| 9406569 | Semiconductor device having diffusion barrier to reduce back channel leakage | Gregory G. Freeman, Kam-Leung Lee, Chengwen Pei, Geng Wang | 2016-08-02 |
| 9397107 | Methods of making three dimensional NAND devices | Raghuveer S. Makala, Yao-Sheng Lee, Senaka Kanakamedala, George Matamis, Johann Alsmeier | 2016-07-19 |
| 9397111 | Select gate transistor with single crystal silicon for three-dimensional memory | Murshed Chowdhury, Jin Liu, Raghuveer S. Makala, Johann Alsmeier | 2016-07-19 |
| 9379132 | NAND memory strings and methods of fabrication thereof | Sateesh Koka, Raghuveer S. Makala, Senaka Kanakamedala, Rahul Sharangpani, Yao-Sheng Lee +1 more | 2016-06-28 |
| 9355727 | Three-dimensional memory structure having a back gate electrode | Johann Alsmeier, Yinda Dong, Akira Matsudaira | 2016-05-31 |
| 9356014 | High-voltage metal-insulator-semiconductor field effect transistor structures | William F. Clark, Jr., Qizhi Liu, John J. Pekarik, Yun Shi | 2016-05-31 |
| 9331090 | Compact three dimensional vertical NAND and method of making thereof | Johann Alsmeier, Raghuveer S. Makala, Xiying Costa | 2016-05-03 |
| 9330763 | Operation modes for an inverted NAND architecture | George Samachisa, Johann Alsmeier, Jian Chen | 2016-05-03 |
| 9305932 | Methods of making three dimensional NAND devices | Senaka Kanakamedala, Raghuveer S. Makala, Yao-Sheng Lee, Johann Alsmeier, George Matamis | 2016-04-05 |
| 9305849 | Method of making a three dimensional NAND device | Masanori Tsutsumi, Shigehiro Fujino, Sateesh Koka, Senaka Kanakamedala, Raghuveer S. Makala +3 more | 2016-04-05 |
| 9240354 | Semiconductor device having diffusion barrier to reduce back channel leakage | Gregory G. Freeman, Kam-Leung Lee, Chengwen Pei, Geng Wang | 2016-01-19 |
| 9236396 | Three dimensional NAND device and method of making thereof | Sateesh Koka, Senaka Kanakamedala, Raghuveer S. Makala, Rahul Sharangpani, George Matamis +1 more | 2016-01-12 |
| 9177966 | Three dimensional NAND devices with air gap or low-k core | Peter Rabkin, Wei Zhao, Jayavel Pachamuthu | 2015-11-03 |
| 9159739 | Floating gate ultrahigh density vertical NAND flash memory | Raghuveer S. Makala, Yao-Sheng Lee, Senaka Kanakamedala, Rahul Sharangpani, George Matamis +4 more | 2015-10-13 |
| 9099047 | Power efficient high frequency display with motion blur mitigation | Maximino Vasquez, Akihiro Takagi, Achintya Bhowmik | 2015-08-04 |
| 9099202 | 3D stacked non-volatile storage programming to conductive state | Andrei Mihnea, Xiying Costa | 2015-08-04 |