YZ

Yanli Zhang

ST Sandisk Technologies: 123 patents #8 of 2,224Top 1%
IBM: 14 patents #8,004 of 70,183Top 15%
IN Intel: 14 patents #2,910 of 30,777Top 10%
Globalfoundries: 4 patents #817 of 4,424Top 20%
Apple: 3 patents #7,422 of 18,612Top 40%
TT Taiyuan University Of Science And Technology: 1 patents #32 of 96Top 35%
WT Western Digital Technologies: 1 patents #1,787 of 3,180Top 60%
SI Schneider Electric It: 1 patents #192 of 414Top 50%
📍 San Jose, CA: #75 of 32,062 inventorsTop 1%
🗺 California: #786 of 386,348 inventorsTop 1%
Overall (All Time): #4,814 of 4,157,543Top 1%
169
Patents All Time

Issued Patents All Time

Showing 51–75 of 169 patents

Patent #TitleCo-InventorsDate
10978482 Ferroelectric memory device with select gate transistor and method of forming the same Johann Alsmeier 2021-04-13
10943917 Three-dimensional memory device with drain-select-level isolation structures and method of making the same Takaaki Iwai, Makoto Koto, Sayako Nagamine, Ching-Huang Lu, Wei Zhao +1 more 2021-03-09
10930674 Three-dimensional flat NAND memory device having curved memory elements and methods of making the same Zhixin Cui, Masatoshi Nishikawa 2021-02-23
10916287 Ferroelectric memory device containing a series connected select gate transistor and method of forming the same Johann Alsmeier 2021-02-09
10879269 Ferroelectric memory device containing a series connected select gate transistor and method of forming the same Johann Alsmeier 2020-12-29
10868042 Ferroelectric memory device containing word lines and pass gates and method of forming the same Johann Alsmeier 2020-12-15
10854629 Three-dimensional memory device containing asymmetric, different size support pillars and method for making the same Chun Ge, Jixin Yu, Fabo Yu, Xin Li 2020-12-01
10811058 Bonded assembly containing memory die bonded to integrated peripheral and system die and methods for making the same Zhixin Cui, Akio Nishida, Johann Alsmeier, Yan Li, Steven T. Sprouse 2020-10-20
10811431 Ferroelectric memory device containing word lines and pass gates and method of forming the same Raghuveer S. Makala 2020-10-20
10777575 Three-dimensional memory device with self-aligned vertical conductive strips having a gate-all-around configuration and method of making the same Zhixin Cui, Kiyohiko Sakakibara 2020-09-15
10741572 Three-dimensional memory device having multilayer word lines containing selectively grown cobalt or ruthenium and method of making the same Rahul Sharangpani, Raghuveer S. Makala, Yao-Sheng Lee 2020-08-11
10741128 Dual scan out display system Srikanth Kambhatla 2020-08-11
10734070 Programming selection devices in non-volatile memory strings Xiang Yang, Dengtao Zhao, Huai-Yuan Tseng, Deepanshu Dutta, Zhongguang Xu +1 more 2020-08-04
10727215 Three-dimensional memory device with logic signal routing through a memory die and methods of making the same Kwang Ho Kim, Johann Alsmeier 2020-07-28
10700090 Three-dimensional flat NAND memory device having curved memory elements and methods of making the same Zhixin Cui, Masatoshi Nishikawa 2020-06-30
10700078 Three-dimensional flat NAND memory device having curved memory elements and methods of making the same Zhixin Cui, Masatoshi Nishikawa 2020-06-30
10685979 Three-dimensional memory device with drain-select-level isolation structures and method of making the same Ching-Huang Lu, Wei Zhao, James Kai 2020-06-16
10685978 Three-dimensional memory device with drain-select-level isolation structures and method of making the same Ching-Huang Lu, Wei Zhao, James Kai 2020-06-16
10622369 Three-dimensional memory device including contact via structures that extend through word lines and method of making the same Fei Zhou, Raghuveer S. Makala, Hiroyuki Kinoshita, James Kai, Johann Alsmeier +2 more 2020-04-14
10600800 Three-dimensional memory device containing multilevel drain select gate isolation and methods of making the same Masatoshi Nishikawa, Shinsuke Yada 2020-03-24
10497711 Non-volatile memory with reduced program speed variation Ashish Baraskar, Liang Pang, Raghuveer S. Makala, Yingda Dong 2019-12-03
10475804 Three-dimensional memory device containing multilevel drain select gate isolation and methods of making the same Masatoshi Nishikawa, Shinsuke Yada 2019-11-12
10461163 Three-dimensional memory device with thickened word lines in terrace region and method of making thereof Senaka Kanakamedala, Yoshihiro Kanno, Raghuveer S. Makala, Jin Liu, Murshed Chowdhury +1 more 2019-10-29
10453854 Three-dimensional memory device with thickened word lines in terrace region Yoshihiro Kanno, Senaka Kanakamedala, Raghuveer S. Makala, Jin Liu, Murshed Chowdhury 2019-10-22
10438964 Three-dimensional memory device having direct source contact and metal oxide blocking dielectric and method of making thereof Raghuveer S. Makala, Senaka Kanakamedala, Yao-Sheng Lee 2019-10-08