Issued Patents All Time
Showing 401–425 of 534 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7781817 | Structures, fabrication methods, and design structures for multiple bit flash memory cells | Zhijiong Luo | 2010-08-24 |
| 7776674 | Hybrid strained orientated substrates and devices | Kangguo Cheng | 2010-08-17 |
| 7776725 | Anti-halo compensation | Philip J. Oldiges, Cheruvu Murthy | 2010-08-17 |
| 7767503 | Hybrid SOI/bulk semiconductor transistors | Philip J. Oldiges, Bruce B. Doris, Xinlin Wang, Oleg Gluschenkov, Huajie Chen +1 more | 2010-08-03 |
| 7768006 | Field effect structure and method including spacer shaped metal gate with asymmetric source and drain regions | Zhengwen Li | 2010-08-03 |
| 7755171 | Transistor structure with recessed source/drain and buried etch stop layer and related method | — | 2010-07-13 |
| 7755926 | 3-D SRAM array to improve stability and performance | Yue Tan | 2010-07-13 |
| 7750415 | Structure and method for making high density MOSFET circuits with different height contact lines | — | 2010-07-06 |
| 7749842 | Structures and methods for making strained MOSFETs | Steven Bedell, Bruce B. Doris, Ying Zhang | 2010-07-06 |
| 7750414 | Structure and method for reducing threshold voltage variation | Yanfeng Wang, Daewon Yang, Huajie Chen | 2010-07-06 |
| 7741658 | Self-aligned super stressed PFET | Yaocheng Liu, Zhijiong Luo | 2010-06-22 |
| 7741645 | Three-dimensional integrated heterogeneous semiconductor structure | — | 2010-06-22 |
| 7737501 | FinFET SRAM with asymmetric gate and method of manufacture thereof | Haining Yang | 2010-06-15 |
| 7732874 | FinFET structure using differing gate dielectric materials and gate electrode materials | Bruce B. Doris, Ying Zhang | 2010-06-08 |
| 7732288 | Method for fabricating a semiconductor structure | Lawrence A. Clevenger, Omer H. Dokumaci, Oleg Gluschenkov, Kaushik A. Kumar, Carl Radens +1 more | 2010-06-08 |
| 7732270 | Device having enhanced stress state and related methods | Dureseti Chidambarrao, Ying Li, Rajeev Malik, Shreesh Narasimha, Haining Yang | 2010-06-08 |
| 7728364 | Enhanced mobility CMOS transistors with a V-shaped channel with self-alignment to shallow trench isolation | Thomas W. Dyer | 2010-06-01 |
| 7723791 | Strained silicon directly-on-insulator substrate with hybrid crystalline orientation and different stress levels | Bruce B. Doris, Huajie Chen, Patricia M. Mooney, Stephen W. Bedell | 2010-05-25 |
| 7723750 | MOSFET with super-steep retrograded island | Effendi Leobandung, Anda C. Mocuta, Dan M. Mocuta | 2010-05-25 |
| 7718513 | Forming silicided gate and contacts from polysilicon germanium and structure formed | Wenjuan Zhu, Zhijiong Luo | 2010-05-18 |
| 7713806 | Structures and methods for manufacturing of dislocation free stressed channels in bulk silicon and SOI MOS devices by gate stress engineering with SiGe and/or Si:C | Bruce B. Doris, Huajie Chen | 2010-05-11 |
| 7709333 | Method for reducing overlap capacitance in field effect transistors | Oleg Gluschenkov | 2010-05-04 |
| 7704844 | High performance MOSFET | Jing Wang | 2010-04-27 |
| 7701013 | Nanoelectromechanical transistors and methods of forming same | — | 2010-04-20 |
| 7696574 | Semiconductor substrate with multiple crystallographic orientations | — | 2010-04-13 |