Issued Patents All Time
Showing 426–450 of 534 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7696040 | Method for fabrication of fin memory structure | — | 2010-04-13 |
| 7696025 | Sidewall semiconductor transistors | Lawrence A. Clevenger, Omer H. Dokumaci, Kaushik A. Kumar, Carl Radens, Dureseti Chidambarrao | 2010-04-13 |
| 7691690 | Methods for forming dual fully silicided gates over fins of FinFet devices | Zhijiong Luo | 2010-04-06 |
| 7691482 | Structure for planar SOI substrate with multiple orientations | Bruce B. Doris, Meikei Ieong, Philip J. Oldiges, Min Yang | 2010-04-06 |
| 7674697 | MOSFET with multiple fully silicided gate and method for making the same | Zhijiong Luo | 2010-03-09 |
| 7674667 | CMOS structure including topographic active region | — | 2010-03-09 |
| 7670896 | Method and structure for reducing floating body effects in MOSFET devices | Qingqing Liang | 2010-03-02 |
| 7666790 | Silicide gate field effect transistors and methods for fabrication thereof | Zhijiong Luo, William K. Henson, Christian Lavoie | 2010-02-23 |
| 7666774 | CMOS structure including dual metal containing composite gates | Dae-Gyu Park, Zhijiong Luo, Ying Zhang | 2010-02-23 |
| 7655989 | Triple gate and double gate finFETs with different vertical dimension fins | Yue Tan | 2010-02-02 |
| 7646039 | SOI field effect transistor having asymmetric junction leakage | Zhijiong Luo, Qingqing Liang | 2010-01-12 |
| 7619276 | FinFET flash memory device with an extended floating back gate | — | 2009-11-17 |
| 7615831 | Structure and method for fabricating self-aligned metal contacts | Werner Rausch | 2009-11-10 |
| 7612270 | Nanoelectromechanical digital inverter | — | 2009-11-03 |
| 7602021 | Method and structure for strained FinFET devices | Bruce B. Doris, Diane C. Boyd | 2009-10-13 |
| 7595233 | Gate stress engineering for MOSFET | Zhijiong Luo, Yung Fu Chong | 2009-09-29 |
| 7569892 | Method and structure for forming self-aligned, dual stress liner for CMOS devices | Huicai Zhong, Effendi Leobandung | 2009-08-04 |
| 7569447 | Method of forming transistor structure having stressed regions of opposite types | Haining Yang | 2009-08-04 |
| 7566609 | Method of manufacturing a semiconductor structure | Zhijiong Luo, Yung Fu Chong | 2009-07-28 |
| 7564081 | finFET structure with multiply stressed gate electrode | Zhijiong Luo | 2009-07-21 |
| 7560758 | MOSFETs comprising source/drain recesses with slanted sidewall surfaces, and methods for fabricating the same | Hong Lin | 2009-07-14 |
| 7560328 | Strained Si on multiple materials for bulk or SOI substrates | Dureseti Chidambarrao, Omer H. Dokumaci, Oleg Gluschenkov | 2009-07-14 |
| 7553709 | MOSFET with body contacts | Zhijiong Luo | 2009-06-30 |
| 7550354 | Nanoelectromechanical transistors and methods of forming same | — | 2009-06-23 |
| 7544994 | Semiconductor structure with multiple fins having different channel region heights and method of forming the semiconductor structure | Dominic J. Schepis | 2009-06-09 |