Issued Patents All Time
Showing 51–75 of 165 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10896976 | Embedded source/drain structure for tall FinFet and method of formation | Veeraraghavan S. Basker, Kangguo Cheng, Ali Khakifirooz, Henry K. Utomo | 2021-01-19 |
| 10892181 | Semiconductor device with mitigated local layout effects | Huimei Zhou, Gen Tsutsui, Veeraraghavan S. Basker, Andrew M. Greene, Dechao Guo +1 more | 2021-01-12 |
| 10885979 | Paired intercalation cells for drift migration | Jianshi Tang, Praneet Adusumilli, Takashi Ando | 2021-01-05 |
| 10833048 | Nanowire enabled substrate bonding and electrical contact formation | Li-Wen Hung, Hari V. Mallela | 2020-11-10 |
| 10818759 | Self aligned replacement metal source/drain finFET | Emre Alptekin, Robert R. Robison | 2020-10-27 |
| 10811413 | Multi-threshold vertical FETs with common gates | Takashi Ando, Choonghyun Lee, Hari V. Mallela, Li-Wen Hung | 2020-10-20 |
| 10770512 | Stacked resistive random access memory with integrated access transistor and high density layout | Takashi Ando, Hari V. Mallela, Li-Wen Hung | 2020-09-08 |
| 10685866 | Fin isolation to mitigate local layout effects | Huimei Zhou, Gen Tsutsui, Andrew M. Greene, Dechao Guo, Huiming Bu +2 more | 2020-06-16 |
| 10658224 | Method of fin oxidation by flowable oxide fill and steam anneal to mitigate local layout effects | Huimei Zhou, Gen Tsutsui, Veeraraghavan S. Basker, Andrew M. Greene, Dechao Guo +1 more | 2020-05-19 |
| 10644104 | Vertical fin field effect transistor with air gap spacers | Hari V. Mallela, Robert R. Robison, Rajasekhar Venigalla | 2020-05-05 |
| 10636874 | External resistance reduction with embedded bottom source/drain for vertical transport FET | Choonghyun Lee, Jingyun Zhang, Miaomiao Wang | 2020-04-28 |
| 10586854 | Gate-all-around field effect transistor having multiple threshold voltages | Ruqiang Bao, Michael A. Guillorn, Terence B. Hook, Robert R. Robison, Tenko Yamashita | 2020-03-10 |
| 10559690 | Embedded source/drain structure for tall FinFET and method of formation | Veeraraghavan S. Basker, Kangguo Cheng, Ali Khakifirooz, Henry K. Utomo | 2020-02-11 |
| 10559670 | Nanosheet field effect transistors with partial inside spacers | Michael A. Guillorn, Terence B. Hook, Robert R. Robison, Rajasekhar Venigalla | 2020-02-11 |
| 10424515 | Vertical FET devices with multiple channel lengths | Hari V. Mallela, Rajasekhar Venigalla | 2019-09-24 |
| 10418450 | Self aligned replacement metal source/drain finFET | Emre Alptekin, Robert R. Robison | 2019-09-17 |
| 10403628 | Finfet based ZRAM with convex channel region | Ravikumar Ramachandran | 2019-09-03 |
| 10381463 | Patterned sidewall smoothing using a pre-smoothed inverted tone pattern | Kafai Lai, Hari V. Mallela, Hiroyuki Miyazoe, Rajasekhar Venigalla | 2019-08-13 |
| 10340340 | Multiple-threshold nanosheet transistors | Ruqiang Bao, Michael A. Guillorn, Terence B. Hook, Nicolas Loubet, Robert R. Robison +1 more | 2019-07-02 |
| 10283416 | Vertical FETS with variable bottom spacer recess | Hari V. Mallela, Rajasekhar Venigalla | 2019-05-07 |
| 10282646 | Tag with tunable retro-reflectors | Evan G. Colgan, Fuad E. Doany, Li-Wen Hung, Bucknell C. Webb | 2019-05-07 |
| 10249739 | Nanosheet MOSFET with partial release and source/drain epitaxy | Michael A. Guillorn, Terence B. Hook, Nicolas Loubet, Robert R. Robison | 2019-04-02 |
| 10243041 | Vertical fin field effect transistor with air gap spacers | Hari V. Mallela, Robert R. Robison, Rajasekhar Venigalla | 2019-03-26 |
| 10242980 | Semiconductor fin isolation by a well trapping fin portion | Henry K. Utomo, Kangguo Cheng, Ramachandra Divakaruni, Ravikumar Ramachandran, Huiling Shang | 2019-03-26 |
| 10236344 | Tunnel transistors with abrupt junctions | Emre Alptekin, Hung H. Tran, Xiaobin Yuan | 2019-03-19 |