Issued Patents All Time
Showing 76–100 of 251 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8933528 | Semiconductor fin isolation by a well trapping fin portion | Henry K. Utomo, Kangguo Cheng, Ravikumar Ramachandran, Huiling Shang, Reinaldo Vega | 2015-01-13 |
| 8928086 | Strained finFET with an electrically isolated channel | Henry K. Utomo, Kangguo Cheng, Dechao Guo, Myung-Hee Na, Ravikumar Ramachandran +2 more | 2015-01-06 |
| 8912607 | Replacement metal gate structures providing independent control on work function and gate leakage current | Unoh Kwon, Siddarth A. Krishnan, Ravikumar Ramachandran | 2014-12-16 |
| 8779511 | Integration of fin-based devices and ETSOI devices | Narasimhulu Kanike, Kangguo Cheng, Carl Radens | 2014-07-15 |
| 8759172 | Etch stop layer formation in metal gate process | Zhengwen Li, Michael P. Chudzik, Siddarth A. Krishnan, Unoh Kwon, Richard S. Wise | 2014-06-24 |
| 8703552 | Method and structure for forming capacitors and memory devices on semiconductor-on-insulator (SOI) substrates | Kangguo Cheng | 2014-04-22 |
| 8664075 | High capacitance trench capacitor | Keith Kwong Hon Wong, Roger A. Booth, Jr. | 2014-03-04 |
| 8614485 | Process for fabrication of FINFETs | Jochen Beintner, Gary B. Bronner, Yujun Li | 2013-12-24 |
| 8592264 | Source-drain extension formation in replacement metal gate transistor device | Takashi Ando, Huiming Bu, Bruce B. Doris, Chung-Hsun Lin, Huiling Shang +1 more | 2013-11-26 |
| 8563398 | Electrically conductive path forming below barrier oxide layer and integrated circuit | Gregory Costrini, Jeffrey P. Gambino, Randy W. Mann | 2013-10-22 |
| 8536656 | Self-aligned contacts for high k/metal gate process flow | Ravikumar Ramachandran, Ying Li | 2013-09-17 |
| 8492818 | High capacitance trench capacitor | Keith Kwong Hon Wong, Roger A. Booth, Jr. | 2013-07-23 |
| 8450169 | Replacement metal gate structures providing independent control on work function and gate leakage current | Unoh Kwon, Siddarth A. Krishnan, Ravikumar Ramachandran | 2013-05-28 |
| 8367494 | Electrical fuse formed by replacement metal gate process | Ying Li | 2013-02-05 |
| 8236634 | Integration of fin-based devices and ETSOI devices | Narasimhulu Kanike, Kangguo Cheng, Carl Radens | 2012-08-07 |
| 8159015 | Method and structure for forming capacitors and memory devices on semiconductor-on-insulator (SOI) substrates | Kangguo Cheng | 2012-04-17 |
| 8053823 | Simplified buried plate structure and process for semiconductor-on-insulator chip | Kangguo Cheng, Herbert L. Ho, Carl Radens | 2011-11-08 |
| 8039888 | Conductive spacers for semiconductor devices and methods of forming | Gary B. Bronner, David M. Fried, Jeffrey P. Gambino, Leland Chang, Haizhou Yin +2 more | 2011-10-18 |
| 8017997 | Vertical metal-insulator-metal (MIM) capacitor using gate stack, gate spacer and contact via | Mukta G. Farooq, Jeffrey P. Gambino, Kevin S. Petrarca | 2011-09-13 |
| 7935998 | Self-aligned body contact for a semiconductor-on-insulator trench device and method of fabricating same | Kangguo Cheng | 2011-05-03 |
| 7923840 | Electrically conductive path forming below barrier oxide layer and integrated circuit | Gregory Costrini, Jeffrey P. Gambino, Randy W. Mann | 2011-04-12 |
| 7919347 | Methods of fabricating P-I-N diodes, structures for P-I-N diodes and design structure for P-I-N diodes | Kangguo Cheng, Carl Radens, William R. Tonti | 2011-04-05 |
| 7871895 | Method and structure for relieving transistor performance degradation due to shallow trench isolation induced stress | Wai-Kin Li, Haining Yang | 2011-01-18 |
| 7867893 | Method of forming an SOI substrate contact | Haining Yang, Byeong Y. Kim, Junedong Lee, Gaku Sudo | 2011-01-11 |
| 7821098 | Trench widening without merging | Kangguo Cheng | 2010-10-26 |