Issued Patents All Time
Showing 26–50 of 251 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9966253 | Forming nanotips | Kangguo Cheng, Juntao Li, Shogo Mochizuki | 2018-05-08 |
| 9960168 | Capacitor strap connection structure and fabrication method | Veeraraghavan S. Basker, Kangguo Cheng, Benjamin Cipriany, Brian J. Greene, Ali Khakifirooz +2 more | 2018-05-01 |
| 9954109 | Vertical transistor including controlled gate length and a self-aligned junction | Kangguo Cheng | 2018-04-24 |
| 9929060 | Porous silicon relaxation medium for dislocation free CMOS devices | Kangguo Cheng, Jeehwan Kim, Juntao Li, Devendra K. Sadana | 2018-03-27 |
| 9917021 | Porous silicon relaxation medium for dislocation free CMOS devices | Kangguo Cheng, Jeehwan Kim, Juntao Li, Devendra K. Sadana | 2018-03-13 |
| 9917199 | Method for reduced parasitic capacitance and contact resistance in extremely thin silicon-on-insulator (ETSOI) devices due to wrap-around structure of source/drain regions | Kangguo Cheng | 2018-03-13 |
| 9911834 | Integrated strained stacked nanosheet FET | Kangguo Cheng, Juntao Li, Xin Miao | 2018-03-06 |
| 9865509 | FinFET CMOS with Si NFET and SiGe PFET | Kangguo Cheng, Jeehwan Kim | 2018-01-09 |
| 9735173 | Reduced parasitic capacitance and contact resistance in extremely thin silicon-on-insulator (ETSOI) devices due to wrap-around structure of source/drain regions | Kangguo Cheng | 2017-08-15 |
| 9735277 | Partially dielectric isolated fin-shaped field effect transistor (FinFET) | Kangguo Cheng, Johnathan E. Faltermeier, Edward J. Nowak, Kern Rim | 2017-08-15 |
| 9735269 | Integrated strained stacked nanosheet FET | Kangguo Cheng, Juntao Li, Xin Miao | 2017-08-15 |
| 9735234 | Stacked nanowire devices | Kangguo Cheng, Juntao Li | 2017-08-15 |
| 9660105 | Finfet crosspoint flash memory | Arvind Kumar, Carl Radens | 2017-05-23 |
| 9634006 | Third type of metal gate stack for CMOS devices | Sameer H. Jain, Viraj Y. Sardesai, Keith H. Tabakman | 2017-04-25 |
| 9620641 | FinFET with epitaxial source and drain regions and dielectric isolated channel region | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek, Soon-Cheon Seo | 2017-04-11 |
| 9614077 | Vertical finfet with strained channel | Kangguo Cheng, Juntao Li | 2017-04-04 |
| 9613956 | Self-aligned punchthrough stop doping in bulk finFET by reflowing doped oxide | Michael P. Belyansky, Kangguo Cheng | 2017-04-04 |
| 9608067 | Hybrid aspect ratio trapping | Kangguo Cheng, Hong He, Juntao Li | 2017-03-28 |
| 9559120 | Porous silicon relaxation medium for dislocation free CMOS devices | Kangguo Cheng, Jeehwan Kim, Juntao Li, Devendra K. Sadana | 2017-01-31 |
| 9537011 | Partially dielectric isolated fin-shaped field effect transistor (FinFET) | Kangguo Cheng, Johnathan E. Faltermeier, Edward J. Nowak, Kern Rim | 2017-01-03 |
| 9524986 | Trapping dislocations in high-mobility fins below isolation layer | Michael P. Chudzik, Judson R. Holt, Arvind Kumar, Unoh Kwon | 2016-12-20 |
| 9515140 | Patterned strained semiconductor substrate and device | Kangguo Cheng | 2016-12-06 |
| 9496258 | Semiconductor fin isolation by a well trapping fin portion | Henry K. Utomo, Kangguo Cheng, Ravikumar Ramachandran, Huiling Shang, Reinaldo Vega | 2016-11-15 |
| 9484267 | Stacked nanowire devices | Kangguo Cheng, Juntao Li | 2016-11-01 |
| 9484347 | FinFET CMOS with Si NFET and SiGe PFET | Kangguo Cheng, Jeehwan Kim | 2016-11-01 |