Issued Patents All Time
Showing 51–75 of 251 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9472402 | Methods and structures for protecting one area while processing another area on a chip | Deok-kee Kim, Kenneth T. Settlemyer, Jr., Kangguo Cheng, Carl Radens, Dirk Pfeiffer +4 more | 2016-10-18 |
| 9455314 | Y-FET with self-aligned punch-through-stop (PTS) doping | Kangguo Cheng, Juntao Li | 2016-09-27 |
| 9431523 | Local thinning of semiconductor fins | Kangguo Cheng, Carl Radens | 2016-08-30 |
| 9425196 | Multiple threshold voltage FinFETs | Kangguo Cheng, Juntao Li, Fee Li Lie | 2016-08-23 |
| 9418903 | Structure and method for effective device width adjustment in finFET devices using gate workfunction shift | Arvind Kumar, Carl Radens | 2016-08-16 |
| 9397002 | Self-aligned punchthrough stop doping in bulk finFET by reflowing doped oxide | Michael P. Belyansky, Kangguo Cheng | 2016-07-19 |
| 9349730 | Fin transformation process and isolation structures facilitating different Fin isolation schemes | Ajey Poovannummoottil Jacob, Kangguo Cheng, Bruce B. Doris, Nicolas Loubet, Prasanna Khare | 2016-05-24 |
| 9312360 | FinFET with epitaxial source and drain regions and dielectric isolated channel region | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek, Soon-Cheon Seo | 2016-04-12 |
| 9305930 | Finfet crosspoint flash memory | Arvind Kumar, Carl Radens | 2016-04-05 |
| 9263454 | Semiconductor structure having buried conductive elements | Emre Alptekin, Pooja R. Batra, Kangguo Cheng, Johnathan E. Faltermeier, Reinaldo Vega | 2016-02-16 |
| 9263449 | FinFET and fin-passive devices | Kangguo Cheng, Ali Khakifirooz, Theodorus E. Standaert | 2016-02-16 |
| 9245981 | Dielectric filler fins for planar topography in gate level | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Edward J. Nowak, Kern Rim | 2016-01-26 |
| 9245892 | Semiconductor structure having buried conductive elements | Emre Alptekin, Pooja R. Batra, Kangguo Cheng, Johnathan E. Faltermeier, Reinaldo Vega | 2016-01-26 |
| 9236389 | Embedded flash memory fabricated in standard CMOS process with self-aligned contact | Kangguo Cheng, Subramanian S. Iyer, Ali Khakifirooz | 2016-01-12 |
| 9224654 | Fin capacitor employing sidewall image transfer | Kangguo Cheng, Shom Ponoth, Theodorus E. Standaert, Tenko Yamashita | 2015-12-29 |
| 9209172 | FinFET and fin-passive devices | Kangguo Cheng, Ali Khakifirooz, Theodorus E. Standaert | 2015-12-08 |
| 9209094 | Fin field effect transistor with dielectric isolation and anchored stressor elements | Kangguo Cheng, Ali Khakifirooz, Kern Rim | 2015-12-08 |
| 9190520 | Strained finFET with an electrically isolated channel | Henry K. Utomo, Kangguo Cheng, Dechao Guo, Myung-Hee Na, Ravikumar Ramachandran +2 more | 2015-11-17 |
| 9093534 | Dielectric filler fins for planar topography in gate level | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Edward J. Nowak, Kern Rim | 2015-07-28 |
| 9093496 | Process for faciltiating fin isolation schemes | Ajey Poovannummoottil Jacob, Kangguo Cheng, Bruce B. Doris, Nicolas Loubet, Prasanna Khare | 2015-07-28 |
| 9059134 | Self-aligned contacts for high k/metal gate process flow | Ravikumar Ramachandran, Ying Li | 2015-06-16 |
| 9059000 | Methods and structures for protecting one area while processing another area on a chip | Deok-kee Kim, Kenneth T. Settlemyer, Jr., Kangguo Cheng, Carl Radens, Dirk Pfeiffer +4 more | 2015-06-16 |
| 9053970 | Patterned strained semiconductor substrate and device | Kangguo Cheng | 2015-06-09 |
| 9029913 | Silicon-germanium fins and silicon fins on a bulk substrate | Henry K. Utomo, Kangguo Cheng, Myung-Hee Na, Ravikumar Ramachandran, Huiling Shang | 2015-05-12 |
| 8987823 | Method and structure for forming a localized SOI finFET | Kangguo Cheng, Ali Khakifirooz, Kern Rim | 2015-03-24 |